Using Current Surface Probe to Measure the Current of the Fast Power Semiconductors

In order to study switching waveforms of a SiC-JFET, its inter-electrode capacitances evolution is necessary when the power device is in linear region. In this paper, the reverse transfer capacitance C gd is at first characterized by the multiplecurrent-probe method and afterwards validated by the measurement with an impedance analyzer. The output capacitance Coss is measured by the same method and compared with the single-pulse characterization, which shows a huge increase of the apparent capacitance values in linear region. The influence of the power transistor internal gate resistor is thus studied, revealing the inter-electrode capacitances measurement difficulties when the power device is in linear region. The characterization results are allowed to finely model the power transistor of which the switching behaviors are validated with the measurement in a buck converter.

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“…CSP transfer impedance can then be used to correct the measured current. More details on how to use the CSP are presented in [22].…”

Section: Sic-jfet Model Validationmentioning

confidence: 99%

Characterization Method of SiC-JFET Interelectrode Capacitances in Linear Region

Videt

Idir

2016

IEEE Trans. Power Electron.

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“…Besides, targeting at high-precise measurement, some current probes with different bandwidths are compared in [30]. By using novel structures and optimized designs, some innovative probes with smaller parasitics and higher bandwidth are proposed [31]- [35]. With respect to the parasitics caused by measurement, some general methodologies are proposed for the high-speed and high-precise measurement of SiC device [36]- [39].…”

Section: Introductionmentioning

confidence: 99%

Impedance-Oriented Transient Instability Modeling of SiC mosfet Intruded by Measurement Probes

Zeng

Zhang

Blaabjerg

et al. 2020

IEEE Trans. Power Electron.

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Due to the breakneck switching speed, SiC MOSFET is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC MOSFET, and it poses an unsolved challenge for the industrial field. This paper is targeting to uncover the transient instability mechanism of SiC MOSFET intruded by probes. Mathematical and circuit models of voltage and current probes are created, by considering the parasitics, input impedance, and bandwidth issues. To reveal the stability principles of SiC MOSFET associated with probes, impedance-oriented and heterogeneity-synthesized models combining device with probes are proposed. Furthermore, an assessment methodology and root locus analysis are presented to demonstrate the transient stability schemes and the stable boundaries of SiC MOSFET influenced by multiple factors, including probe parasitics, device parameters, gate resistances, and snubber circuits. Comparative experiments are presented to confirm the transient behaviors of SiC MOSFET intruded by probe parasitics and regulated by control circuits. It is proven that, because of low bandwidth specifications, the large input capacitance of the voltage probe and coil inductance of the current probe degrade the transient stability of SiC MOSFET. Due to the deteriorated stability margin of SiC MOSFET intruded by the inserted parasitics of probes, instability may also be activated by using the small gate resistance. The snubber circuit is helpful to enhance the transient stability. Advanced probes with high bandwidth and high impedance are crucially needed for stable measurement of wide bandgap power devices like SiC MOSFET.

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“…Among them, GaN devices have the advantage of having a faster switching speed than conventional Si device-based power semiconductors owing to their low on-resistance and device inductance [2][3][4][5]. However, vulnerability to external noise due to high dv/dt of the switch and peak current generation in overcurrent situations can cause problems in stable system operation [6]. Therefore, the analysis of switching current information, which is an important variable for current control, system diagnosis, and protection, is significantly important for evaluating the device model and its characterization.…”

Section: Introductionmentioning

confidence: 99%

PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor

2020

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GaN-based power semiconductors exhibit small on-resistance and high dv/dt of the switch characteristics, thereby enabling the construction of high-efficiency, high-density semiconductor systems with fast switching and low power loss characteristics and miniaturization of passive devices. However, owing to the characteristics of GaN devices that result in them being significantly faster than other devices, the accuracy of the switching transient response significantly affects the noise or inductance in the device. Therefore, securing sufficient sensor bandwidth is considerably important for accurate current measurement in GaN-based devices. Conversely, the current sensor in the form of a non-insulated coil must secure sufficient bandwidth and overcome the tradeoff relationship with measurement sensitivity; moreover, the sensor configuration must be applicable to various power semiconductor types. This study proposes a current sensor model that applies the principle of the printed circuit board Rogowski coil to a surface mount device-type GaN-based half-bridge structure. This structure is applicable to a nonmodular power converter and is designed to secure sufficient bandwidth with a minimum area while simultaneously exhibiting high sensitivity. For the coil design, mutual inductances with existing coil structures were compared and analyzed, and the frequency response and magnetic analysis were evaluated. Experimental verification was performed and the transient response characteristics in various DC voltage ranges are discussed.

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Using Current Surface Probe to Measure the Current of the Fast Power Semiconductors

Cited by 21 publications

References 23 publications

Characterization Method of SiC-JFET Interelectrode Capacitances in Linear Region

Characterization Method of SiC-JFET Interelectrode Capacitances in Linear Region

Impedance-Oriented Transient Instability Modeling of SiC mosfet Intruded by Measurement Probes

PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor

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