Characterization Method of SiC-JFET Interelectrode Capacitances in Linear Region

Li, Ke; Videt, Arnaud; Idir, Nadir

doi:10.1109/tpel.2015.2424320

Cited by 5 publications

(1 citation statement)

References 21 publications

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“…A reduction in the CM conducted emissions was noticed, though, this approach resulted in slight increase in the system losses, system size, and poorer switching waveforms. Meanwhile, [35] proposed a method of characterizing interelectrode capacitances, which will allow for effective study of SiC JFET switching waveform during interelectrode capacitance evolution. The operating range of the JFET was optimized so as to achieve uniform gain during amplitude modulation.…”

Section: Sic Jfet In and Electromagnetic Interference Considerationmentioning

confidence: 99%

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Ehiagwina

Kehinde

Afolabi

et al. 2016

IJATES

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Abstract-properties of Silicon Carbide Junction Field EffectTransistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si). A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

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Section: Sic Jfet In and Electromagnetic Interference Considerationmentioning

confidence: 99%