Impedance-Oriented Transient Instability Modeling of SiC mosfet Intruded by Measurement Probes

Zeng, Zheng; Zhang, Xin; Blaabjerg, Frede; Miao, Linjing

doi:10.1109/tpel.2019.2922246

Cited by 23 publications

(7 citation statements)

References 50 publications

(46 reference statements)

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“…At Vgs = 10 V, with Vds ranging from 0 to 100 V, the on-resistance values at three temperatures are 1.313 mΩ•cm 2 , 1.421 mΩ•cm 2 and 1.475 mΩ•cm 2 , respectively. The formula of on-resistance is given as [5] 𝑅 = (7) where εS is the semiconductor electrical permittivity, µn is the electron mobility and EC is the critical electric field. From Figure 4, it can be seen that excellent agreements with potential distribution, electron density distribution, output characteristics and transfer characteristics are archived.…”

Section: Analysis Of the Lattice Temperaturementioning

confidence: 99%

“…SiC-based power metal oxide-semiconductor field-effect transistors (MOSFETs) are favored for their low gate input impedance, fast switching speed and reduced on-resistance relative to other power devices [7,8]. The high electric breakdown field of SiC enables these MOSFETs to switch power much faster than comparable silicon devices, resulting in lower energy losses.…”

Section: Introductionmentioning

confidence: 99%

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A Simulator for Investigation of Breakdown Characteristics of SiC MOSFETs

Hu,

Liu,

Liu

2024

Applied Sciences

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Breakdown characteristics play an important role in silicon carbide (SiC) power devices; however, the wide bandgap of SiC poses a challenge for numerical simulation of breakdown characteristics. In this work, a self-developed simulator employing a novel numerical processing method to prevent convergence issues, based on semi-classical transport models and including several kinds of mobility, generation and recombination models, is used to investigate the performance and breakdown characteristics of 4H-SiC MOSFETs in high-power applications. Good agreement between our simulator and an experiment and commercial TCAD was achieved. The simulator has good stability and convergence and can be used as a powerful tool to design and optimize semiconductor devices. Further, the breakdown characteristics are evaluated with different factors, including lattice temperature, device structure and doping profiles. Our results show that the doping profile plays the most important role in the breakdown voltage, followed by the device structure, while the impact of lattice temperature is found to be minimal.

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Section: Analysis Of the Lattice Temperaturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Simulator for Investigation of Breakdown Characteristics of SiC MOSFETs

Hu,

Liu,

Liu

2024

Applied Sciences

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“…With the rapid development of China's aerospace technology, the demand for highperformance, high-power devices is becoming increasingly urgent [1,2]. SiC MOSFETs have shown broad application prospects in the aerospace field due to their superior performance in high temperature resistance, low loss, fast switching speed, and high blocking voltage [3,4].…”

Section: Introductionmentioning

confidence: 99%

Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation

Xiang,

Liang,

Feng

et al. 2023

Electronics

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A leakage current is the most critical parameter to characterize heavy ion radiation damage in SiC MOSFETs. An accurate and refined analysis of the source and generation process of a leakage current is the key to revealing the failure mechanism. Therefore, this article finely tests the online and post-irradiation leakage changes and leakage pathways of SiC MOSFETs caused by heavy ion irradiation, analyzes the damaged location of the device in reverse, and discusses the mechanism of leakage generation. The experimental results further confirm that an increase in the leakage current of a device during heavy ion irradiation is positively correlated with the applied voltage of the drain, but the leakage path is not direct from the drain to the source. The experimental analysis of the source of the leakage current of the device after irradiation indicates that there is also a leakage current path between the device gate and source. The research results suggest that the experimental sample is more prone to a single-event gate rupture effect under this heavy ion radiation condition. The gate breakdown mainly occurs in the gate oxide layer at the neck region. This research can provide a theoretical basis for the radiation resistance reinforcement of SiC power devices.

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“…Refs. [29, 30] provided experimental evidence that voltage probes mainly contribute to the potential instability and the measurement delay mainly caused by additional stray elements of the coaxial shunt is very comparable to the fast switching duration of SiC MOSFET.…”

Section: Introductionmentioning

confidence: 99%

“…More importantly, the influence of parasitics introduced by measurement probes is normally ignored for verification of SiC MOSFET modelling, which has been proven to introduce measurement errors and even worse, impedance-oriented transient instability [28][29][30]. The critical parametric inaccuracies and the measurement errors will considerably undermine the evaluation of the SiC MOSFET models.…”

Section: Introductionmentioning

confidence: 99%

Improved simulation modelling and its verification for SiC MOSFET

Yang

Wang

Ding

et al. 2022

IET Power Electronics

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Of crucial importance is to accurately simulate its switching characteristics for the application of SiC MOSFET. Due to the ultrafast switching capability, SiC MOSFET is dependent on interelectrode capacitances and extremely sensitive to parasitics. Therefore, accurate modelling of interelectrode capacitances and knowledge of parasitics are required. Here, an improved SiC MOSFET model driven by an empirical formula with three segments for the non-linear drain-to-gate capacitance in relationship with the drain-to-source voltage is developed. In this way, the capacitance fitting at the inflection point that has a great impact on the switching delay is much improved. By simple self-made high-voltage C-V measurement systems, the accuracy of the proposed formula is verified. More importantly, intruded parasitics by the commonly-used coaxial shunt current measurement loop is analysed in detail. The equivalent circuit of the current measurement loop is incorporated into the device simulation circuit to compensate measurement errors. In this way, the improved model can be more reliably verified and evaluated. A double pulse test is built to verify the proposed model. By comparison of simulation and experimental results, the proposed model works well at different voltage and current operating conditions and offers a reliable and accurate modelling approach.

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Impedance-Oriented Transient Instability Modeling of SiC mosfet Intruded by Measurement Probes

Cited by 23 publications

References 50 publications

A Simulator for Investigation of Breakdown Characteristics of SiC MOSFETs

A Simulator for Investigation of Breakdown Characteristics of SiC MOSFETs

Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation

Improved simulation modelling and its verification for SiC MOSFET

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