Use of fluorine-doped tin oxide instead of indium tin oxide in highly efficient air-fabricated inverted polymer solar cells

Baek, Woonhyuk; Choi, Mi‐Jung; Yoon, Tae‐Sik; Lee, Hyun Ho; Kim, Yong−Sang

doi:10.1063/1.3374406

Cited by 112 publications

(57 citation statements)

References 15 publications

(20 reference statements)

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“…Figure 7 shows that the J-V characteristic of the prepared device with FTO substrate, J SC ¼ 12.56 mA cm À2 , V OC ¼ 450 mV, FF ¼ 42%, and PCE ¼ $2.4%. The improved performance is more likely caused by improving transport properties of charge carriers at the FTO interface, after high temperature annealing [30].…”

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confidence: 99%

Hybrid photovoltaic cells based on ZnO/Sb₂S₃/P3HT heterojunctions

Liu

Wang

et al. 2011

Physica Status Solidi (b)

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We demonstrate hybrid photovoltaic (PV) cells based on n-i-p heterojunctions with incorporated zinc oxide (ZnO) films using a sol-gel method. The cells, employing stibnite (Sb 2 S 3 ), and poly(3-hexylthiophene) (P3HT) materials, as light absorption layers, constitute an active region in the indium tin oxide (ITO)/ ZnO(n)/Sb 2 S 3 (i)/P3HT(p)/Ag hybrid structure. Our investigation shows that annealing temperature has a significant effect on both the crystallinity and optical absorption of Sb 2 S 3 films. The near-intrinsic Sb 2 S 3 films annealed at 300 8C exhibits dark conductivity of 1.42 Â 10 À7 S cm À1 . The performance of PV cells strongly depends on thermal treatment of Sb 2 S 3 , and on the thickness of both the Sb 2 S 3 and P3HT layers. Electronic structures of annealed Sb 2 S 3 films was further studied by photoelectron spectroscopy to understand the physics behind.

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confidence: 99%

Hybrid photovoltaic cells based on ZnO/Sb₂S₃/P3HT heterojunctions

Liu

Wang

et al. 2011

Physica Status Solidi (b)

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“…7 FTO thin films are widely used in the photovoltaic industry as a TCO for its low cost compared to ITO and its stability in air. 8 The SnO 2−x is an n-type semiconductor with a wide bandgap (∼3.6 eV) and it has been reported to possess excellent physical and chemical stability. 9,10 In single crystals, large exciton binding energy of 130 meV (60 meV in ZnO and 25 meV in GaN) and high electron mobility of about 250 cm 2 V −1 s −1 with its carrier density of 7 × 10 15 /cm 3 were reported.…”

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High electron mobility in epitaxial SnO2−x in semiconducting regime

et al. 2015

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We investigated the electronic transport properties of epitaxial SnO2−x thin films on r-plane sapphire substrates. The films were grown by pulsed laser deposition technique and its epitaxial growth direction was [101] and the in-plane alignment was of SnO2−x [010]//Al2O3[12̄10]. When the SnO2−x films were grown in the oxygen pressure of 30 mTorr, we have found the electron mobility of the 30 nm thick SnO2−x thin films strongly dependent on the thicknesses of the fully oxidized insulating SnO2 buffer layer. When the buffer layer thickness increased from 100 nm to 700 nm, the electron mobility of values increased from 23 cm2 V−1 s−1 to 106 cm2 V−1 s−1 and the carrier density increased from 9 × 1017 cm−3 to 3 × 1018 cm−3, which we attribute to reduction of large density of dislocations as the buffer layer thickness increases. In addition, we studied the doping dependence of the electron mobility of SnO2−x thin films grown on top of 500 nm thick insulating SnO2 buffer layers. The oxygen vacancy doping level was controlled by the oxygen pressure during deposition. As the oxygen pressure increased to 47.5 mTorr, the carrier density was found to decrease to 9.1 × 1016 cm−3 and the electron mobility values to 13 cm2 V−1 s−1, which is consistent with the dislocation limited transport properties. We also checked the conductance change of the SnO2−x during thermal annealing cycles, demonstrating unusual stability of its oxygen. The correlation between the electronic transport properties and microstructural defects investigated by the transmission electron microscopy was drawn. The excellent oxygen stability and high electron mobility of low carrier density SnO2−x films demonstrate its potential as a transparent oxide semiconductor.

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“…• C since ITO is known to have poor thermal stability leading to a degradation of the electrical conductivity at elevated temperature greater than 550 • C. [33][34][35][36] Figure 2b shows XRD spectrum of the PAS-TiO 2 film on ITO glass substrate after annealing at 500…”

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confidence: 99%

Polymer-Assisted Solution Processing of TiO₂Thin Films for Resistive-Switching Random Access Memory

Vishwanath

Jeon

Kim

2016

J. Electrochem. Soc.

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In this study, we present a polymer-assisted solution (PAS) process to prepare TiO 2 electrolyte layers for resistive-switching random access memory (ReRAM). The PAS process utilizes the stability of metal-polymer complexes in the coating solution to form uniform and dense films. In addition, the viscosity of the PAS coating solution can easily be adapted for any currently used coating technique. The electrochemical-metallization-based (ECM-based) ReRAM devices were prepared by spin-coating the PAS coating solution on an indium tin oxide (ITO) glass substrate that is used as the bottom electrode. Cu was deposited on the PAS-TiO 2 electrolyte as an electrochemically active metal electrode used as the top electrode. The ECM-based ReRAM with the PAS-TiO 2 electrolyte layer demonstrated bipolar resistive-switching behavior with a memory window wider than 13, cycle endurance over 500 cycles, and retention time longer than 10 4 s. Analysis of the conduction mechanism in high and low resistive states indicates that the resistive switching is attributed to the formation and rupture of Cu conducting filaments (CFs) in the PAS-TiO 2 electrolyte layer. New nonvolatile memory devices with various material characteristics based on ferroelectric polarization, magnetic polarization, and material phase change have been investigated to overcome the scalability issue of modern flash memory devices.1-3 However, recent research efforts have focused on resistive-switching random access memory (ReRAM), also known as conductive-bridge random access memory (CBRAM) or electrochemical-metallization-based (ECMbased) ReRAM, due to its outstanding advantages including a simple structure, low switching power consumption, fast switching speed, and capability of both unipolar and bipolar switching modes.4-6 ECMbased ReRAM consists of a solid electrolyte thin film in between two electrodes, an electrochemically active metal (EAM) electrode such as Ag or Cu and an electrochemically inert metal (EIM) electrode such as Pt, Au, or W. The EAM, biased with a sufficiently positive-polarity voltage with respect to the counter electrode (EIM), is electrochemically dissolved and migrates through the solid electrolyte toward the EIM electrode. Consequently, a conducting bridge forms between the two electrodes, which is also known as a conducting filament (CF). The resistive switching in the ECM-based ReRAM relies on the formation (SET) and rupture (RESET) of the CFs in the solid electrolyte, which depend on the polarity of the applied voltage. 7,8 Various solid electrolyte materials such as perovskites, chalcogenides and metal oxides have been explored for the fabrication of ReRAM.9-21 Most solid electrolyte films have been deposited using vacuum based processes such as thermal oxidation, atomic layer deposition, pulsed laser deposition, sputtering, and thermal evaporation. 15,19,[22][23][24] There are also other efforts devoted to growing metal oxide films as the solid electrolyte layers using chemical solution deposition such as sol-gel process. 25,26 H...

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Use of fluorine-doped tin oxide instead of indium tin oxide in highly efficient air-fabricated inverted polymer solar cells

Cited by 112 publications

References 15 publications

Hybrid photovoltaic cells based on ZnO/Sb₂S₃/P3HT heterojunctions

Hybrid photovoltaic cells based on ZnO/Sb₂S₃/P3HT heterojunctions

High electron mobility in epitaxial SnO2−x in semiconducting regime

Polymer-Assisted Solution Processing of TiO₂Thin Films for Resistive-Switching Random Access Memory

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Use of fluorine-doped tin oxide instead of indium tin oxide in highly efficient air-fabricated inverted polymer solar cells

Cited by 112 publications

References 15 publications

Hybrid photovoltaic cells based on ZnO/Sb2S3/P3HT heterojunctions

Hybrid photovoltaic cells based on ZnO/Sb2S3/P3HT heterojunctions

High electron mobility in epitaxial SnO2−x in semiconducting regime

Polymer-Assisted Solution Processing of TiO2Thin Films for Resistive-Switching Random Access Memory

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Hybrid photovoltaic cells based on ZnO/Sb₂S₃/P3HT heterojunctions

Hybrid photovoltaic cells based on ZnO/Sb₂S₃/P3HT heterojunctions

Polymer-Assisted Solution Processing of TiO₂Thin Films for Resistive-Switching Random Access Memory