Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Abstract

Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant J. Vac. Sci. Technol. A 31, 01A142 (2013); 10.1116/1.4771666Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth J. Vac. Sci. Technol. A 31, 01A106 (2013); 10.1116/1.4756906Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al 2 O 3Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B 2 O 3 films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

Atomic Layer Deposition of Localized Boron- and Hydrogen-Doped Aluminum Oxide Using Trimethyl Borate as a Dopant Precursor

“…TMB exhibits a vapor pressure of 0.22 bar at room temperature . This lowers risks of condensation and enables use without any source heating, as is the case for B­(NMe 2 ) 3 (source temperature of 60 °C) − and the precursors for direct deposition of metal borates, such as Ba­(Tp Et2 ) 2 (source temperatureof 205 °C) . The high vapor pressure is also promising for use in atmospheric-pressure ALD systems.…”

“…TMB exhibits vapour pressure of 0.22 bar at room temperature. 42 This lowers risks of condensation and enables use without any source heating, as is the case for B(NMe 2 ) 3 (source temperature 60 • C) [36][37][38] and the precursors for direct deposition of metal borates, such as 3 as co-reagent for the deposition of films in an ALD-like fashion, both in a binary process (to deposit B 2 O 3 ) and in a mixed film growth in combination with ALD of Al 2 O 3 using trimethyl aluminum (TMA) and oxygen plasma as precursors. It is found out that the reaction mechanism is dependent on the Lewis acidity of the surface resulting in two different growth modes: chemisorption on Al-OH and Si-OH terminated surface and physisorption on more acidic B-OH surface sites.…”

An All-Solid-State Battery with a Tailored Electrode–Electrolyte Interface Using Surface Chemistry and Interlayer-Based Approaches

“…Although NH 3 gas was used without further purification, TDMAB was purified using a freeze−pump−thaw technique and distilled under vacuum into the chamber at room temperature due to its sufficiently high vapor pressure. 37 ALD exposures are recorded in Langmuir (L; 1 L = 10 −6 Torr s) and have not been corrected for ion gauge sensitivity or flux to the surface. The ALD process was optimized by monitoring the saturation exposures of TDMAB and NH 3 on a clean LLZT pellet.…”

Influence of O(3P)/O2 Flux on the Atomic Layer Deposition of B2O3 Using Trimethyl Borate at Room Temperature

“…The formation of B 2 O 3 on Si by ALD is of longstanding interest for precise shallow doping of high-aspect-ratio structures. − Rapid thermal annealing permits dopant activation and controlled thermal diffusion of B into the Si substrate, with B dopant concentration proportional to film thickness. B 2 O 3 films have been deposited using corrosive precursors like BBr 3 /H 2 O and BCl 3 /H 2 O at room temperature.…”

“…B 2 O 3 films have been deposited using corrosive precursors like BBr 3 /H 2 O and BCl 3 /H 2 O at room temperature. Deposition has also been demonstrated using noncorrosive precursors such as tris­(dimethylamino)­borane (TDMAB) , and TMB, in conjunction with O 2 plasma, , O 3 , , and H 2 O at ∼300 to 423 K . However, pinpointing the plasma component that is responsible for surface reactions, its effect on ligand removal chemistry and the purity of boron oxide films has not, to the best of our knowledge, been previously investigated.…”