Highlights d Loss of METTL3 inhibits proliferation and differentiation of hematopoietic stem cells d Depletion of m 6 A results in aberrant dsRNA formation of long m 6 A-modified transcripts d Loss of METTL3 induces deleterious innate immune responses in hematopoiesis d Mavs and Rnasel depletion partially rescue defects in Vav-Cre + -Mettl3 fl/

In this study, atomic layer deposition (ALD) of nanoscale boron oxide (B2O3) films on Si using BCl3/H2O precursors at room temperature was investigated using in situ x-ray photoelectron spectroscopy (XPS). B2O3 thin films are of considerable interest in ultra-shallow Si doping applications, including high aspect ratio FinFET structures, where film conformality and precise thickness control are crucial. ALD is therefore of particular interest for such applications. XPS data demonstrate that initial BCl3 exposures on Si at room temperature are self-limiting and are accompanied by partial B-Cl dissociation and Cl-Si formation. H2O exposures >1.7 × 108 Langmuir at room temperature removed Cl from B sites, but failed to remove Cl from the Cl-Si species. ALD-type growth of B2O3 was observed with an average growth rate of ∼2.5 Å/cycle and without further increase in the Cl content. The initial Cl contamination was due to Cl-Si bond formation at the interface, without Cl incorporation into the oxide film. The role of Cl in the inhibition of oxide film growth was further investigated by the reactions of BCl3/O2 on SiO2 at room temperature and 650 K. BCl3/O2 precursors exhibit negligible B2O3 growth at room temperature. At 650 K, B2O3 growth was observed with a decreasing growth rate per BCl3/O2 cycle, corresponding to an increase in the Cl:B atomic ratio. These data indicate that room temperature ALD using BCl3/H2O precursors is a potential route toward the formation of uniform B2O3 films for shallow Si doping applications, but that Cl-Si formation significantly impacts initial oxide nucleation and growth.

Practical catalysts with a porous framework, such as zeolites, host catalytic reactions at active sites engrained in the pores and channels of the scaffold. The mechanism of interaction at these active sites, defining catalyst performance, remains elusive, in large part, due to the lack of surface characterization methods available for thick films or powders. Here, we present thin film analogs of practical catalysts that allow for the implementation of surface characterization tools, including advanced microscopy and operando spectroscopy methodologies. Specifically, we investigated bilayer silica, MFI nanosheets, and UiO-66 thin films using a multi-modal approach addressing film growth, characterization, and gas adsorption aimed at understanding catalytic activity, reactivity, and selectivity properties, as defined by molecular-level changes in the reaction mechanism.

Summary Plants being sessile integrate information from a variety of endogenous and external cues simultaneously to optimize growth and development. This necessitates the signaling networks in plants to be highly dynamic and flexible. One such network involves heterotrimeric G‐proteins comprised of Gα, Gβ, and Gγ subunits, which influence many aspects of growth, development, and stress response pathways. In plants such as Arabidopsis, a relatively simple repertoire of G‐proteins comprised of one canonical and three extra‐large Gα, one Gβ and three Gγ subunits exists. Because the Gβ and Gγ proteins form obligate dimers, the phenotypes of plants lacking the sole Gβ or all Gγ genes are similar, as expected. However, Gα proteins can exist either as monomers or in a complex with Gβγ, and the details of combinatorial genetic and physiological interactions of different Gα proteins with the sole Gβ remain unexplored. To evaluate such flexible, signal‐dependent interactions and their contribution toward eliciting a specific response, we have generated Arabidopsis mutants lacking specific combinations of Gα and Gβ genes, performed extensive phenotypic analysis, and evaluated the results in the context of subunit usage and interaction specificity. Our data show that multiple mechanistic modes, and in some cases complex epistatic relationships, exist depending on the signal‐dependent interactions between the Gα and Gβ proteins. This suggests that, despite their limited numbers, the inherent flexibility of plant G‐protein networks provides for the adaptability needed to survive under continuously changing environments.