Atomic Layer Deposition of Localized Boron- and Hydrogen-Doped Aluminum Oxide Using Trimethyl Borate as a Dopant Precursor

Abstract

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Stabilization of the surface and lattice structure for LiNi0.83Co0.12Mn0.05O2via B2O3 atomic layer deposition and post-annealing

“…Although ALD is regarded as a linear growth process in thin film deposition. Actually, the surface compositions of the substrate influence the ALD growth rates in the initial stage 37,38 . Surface LiOH and Li 2 CO 3 could induce the variation of the B 2 O 3 growth rates on the SC83 particles.…”