“…In most conventional solar cell semiconductors, such as silicon, CIGS, and CdTe, the PV performance declines with increasing temperature, resulting in a negative temperature coefficient (TC) throughout the operating temperature range. , Temperature-dependence studies of PSCs based on MAPbI 3 absorbers reported a monotonic decrease in PCE and other PV parameters (i.e., open-circuit voltage ( V oc ), short-circuit current density ( J sc ), and fill factor (FF)) when the temperature was increased above RT . The degradation of organic-compound-based hole/electron transport materials, such as Spiro-OMeOTAD and Phenyl-C61-butyric acid methyl ester (PCBM), by pinhole formation and halide migration into the charge transport layers is reported as one of the main factors behind this decline. ,,,, A pseudo-degradation of PV performance and a slow photoresponse have been reported at low temperatures and attributed to charge accumulation at the transport layer/perovskite interface . Studies of MAPbI 3 over a wide range of temperature (−40 to 100 °C) have generally shown a significant decrease in performance at low and high temperatures, with a maximum PCE in the range 20–40 °C. , However, other studies have observed a steady improvement in PCE when the temperature was decreased from 25 to −20 °C .…”