No abstract

No abstract

We report stable perovskite solar cells having 3D/2D perovskite absorber layers and CuSCN as an inorganic hole transporting material (HTM). (Phenylethyl)­ammonium (PEA) and [(4-fluorophenyl)­ethyl]­ammonium (FPEA) have been chosen as 2D cations, creating thin layers of (PEA)2PbI4 or (FPEA)2PbI4 on top of the 3D perovskite. The 2D perovskite as an interfacial layer, neutralizes defects at the surface of the 3D perovskite absorber, and can protect from moisture-induced degradations. We demonstrate excellent charge extraction through the modified interfaces into the inorganic CuSCN HTM, with device efficiencies above 18%, compared to 19.3% with conventional spiro-OMeTAD. Furthermore, we show significantly enhanced ambient stability.

In this Letter, the electric-field control of ferromagnetism was demonstrated in a back-gated Mn-doped ZnO (Mn-ZnO) nanowire (NW) field-effect transistor (FET). The ZnO NWs were synthesized by a thermal evaporation method, and the Mn doping of 1 atom % was subsequently carried out in a MBE system using a gas-phase surface diffusion process. Detailed structural analysis confirmed the single crystallinity of Mn-ZnO NWs and excluded the presence of any precipitates or secondary phases. For the transistor, the field-effect mobility and n-type carrier concentration were estimated to be 0.65 cm(2)/V·s and 6.82 × 10(18) cm(-3), respectively. The magnetic hysteresis curves measured under different temperatures (T = 10-350 K) clearly demonstrate the presence of ferromagnetism above room temperature. It suggests that the effect of quantum confinements in NWs improves Tc, and meanwhile minimizes crystalline defects. The magnetoresistace (MR) of a single Mn-ZnO NW was observed up to 50 K. Most importantly, the gate modulation of the MR ratio was up to 2.5 % at 1.9 K, which implies the electric-field control of ferromagnetism in a single Mn-ZnO NW.