“…(2) As Al 0.83 In 0.17 N and GaN are lattice matched, there are no mechanical constraints in the epitaxial structures. These mechanical constraints are harmful to the reliability of the devices and are also supposed to be at the origin of trapping centers in transistors [7–9]. Fig.…”
A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.
“…(2) As Al 0.83 In 0.17 N and GaN are lattice matched, there are no mechanical constraints in the epitaxial structures. These mechanical constraints are harmful to the reliability of the devices and are also supposed to be at the origin of trapping centers in transistors [7–9]. Fig.…”
A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.
“…However, the materials system is difficult to grow due to the distinctly different growth conditions required for GaN and InAlN and the difficulty to incorporate In and Al in the same lattice without clustering. However, these problems have been widely overcome in first promising investigations [2,3].…”
We report on the investigation of an InAlN/GaN HEMT structure, delivering higher sheet carrier density than the commonly used AIGaN/GaN system. We achieved in a reproducible way more than 2 A/mm maximum drain current density for a gate length of 0.25 μm with unpassivated undoped devices realized on sapphire substrates. Small signal measurements yield a F T = 31 GHz and F MAX = 52 GHz , which illustrates the capability of these structures to operate at high frequencies. Moreover, the pulsed analysis indicates a more stable surface in the case of AlInN than that of AlGaN , attributed to the lattice matched growth of this barrier with 17% In content on GaN , avoiding strain piezo polarization in the material.
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