ABOVE 2 A/mm DRAIN CURRENT DENSITY OF <font>GaN</font> HEMTS GROWN ON SAPPHIRE

Medjdoub, Farid; Carlin, J.-F.; Gonschorek, M.; Feltin, E.; Py, M.A.; Grandjean, N.; Kohn, E.

doi:10.1142/s012915640700428x

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…6) using a lattice matched InAlN/GaN HEMT on sapphire with 13 nm barrier and 0.25 m gate length. This value is about twice as much as obtained for AlGaN/GaN FETs [19]. The low surface potential allows down scaling of the barrier layer to the tunnelling limit and semi-enhancement mode of operation.…”

Section: Device Performances DC Characteristicsmentioning

confidence: 53%

“…The small signal microwave performance of InAlN/GaN HEMTs is for that reason very comparable with that of AlGaN/GaN HEMTs at similar gate length with an F T = 53 GHz and F max = 95 GHz for 0.2 m gate length (and no T-gate). The same holds for the small signal performance for MOSHEMTs with a high-k gate dielectric like Al 2 O 3 [19]. The current gain cut-off frequency F T for different gate lengths of InAlN/GaN devices with 13 nm barrier thickness has been measured in order to emphasize the advantage of a high aspect ratio.…”

Section: Dynamic Characteristicsmentioning

confidence: 94%

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Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub¹,

Carlin²,

Gaquière³

et al. 2008

TOEEJ

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Abstract:The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.

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Section: Device Performances DC Characteristicsmentioning

confidence: 53%

Section: Dynamic Characteristicsmentioning

confidence: 94%

Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub¹,

Carlin²,

Gaquière³

et al. 2008

TOEEJ

Self Cite

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“…They are in fact widely expected to outperform their AlGaN/GaN HEMT counterparts [3] due to the system's unique electronic properties, such as a high polarization charge and the possibility to grow the materials lattice-matched. HFETs with current densities well above ∼2 A mm −1 have already been demonstrated [4,5]. These AlInN-based transistors also exhibited outstanding RF characteristics, with a current gain cutoff frequency (f T ) reaching 370 GHz for a 30 nm gate length (L G ) device [6], and a maximum power of 10.3 W mm −1 with a power-added efficiency of 51% at 10 GHz under dc operation [7].…”

Section: Introductionmentioning

confidence: 99%

Large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate

Sultana¹,

Muhtadi²,

Lachab³

et al. 2014

Semicond. Sci. Technol.

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We report on the study of multi-gate AlInN/InN/GaN metal-oxide semiconductor field-effect transistors (MOSHFET) over a sapphire substrate with gate widths varying from 0.25 mm-5 mm. A high saturation output current of ∼1.3 A and a maximum extrinsic transconductance of 210 mS are demonstrated for the 5 mm wide device with a gate length of 1.8 μm and a sourcedrain spacing of 12 μm. The maximum saturation output current and the maximum extrinsic transconductance appear to scale nearly linearly with the gate width up to 1 mm, beyond which joule heating dominates. These results show the potential of these MOSHFETs for high-voltage and high power operation.

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Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Lugani

Taniyasu

et al. 2015

Journal of Applied Physics

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Articles you may be interested inHigh-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observationsThe capacitance-voltage-temperature characteristics of nonintentionally doped In 0.16 Al 0.84 N/n þ -GaN Schottky diodes were measured at 1 MHz and in the 90-400 K range. They are discussed in the framework of existing theories, which properly treat the Poisson's equation, especially near the edge of the space-charge region, the so-called transition region. The concentration of a shallow donor and of a deep DX-like center, previously reported, is properly determined. The key parameter to discuss the temperature dependence of the capacitance is the ratio between the frequency of the small ac modulating signal and the temperature-dependent emission rate associated to each level. The capacitance-voltage C-V a curves were successfully fitted using a three parameters expression over the full range of temperatures. The concentration of both shallow and deep levels exceeds a few 10 18 cm À3 . Based on secondary ion mass spectrometry profiling, we assign both levels to the dominant oxygen impurity. This result supports our previous assignment of the shallow donor to a substitutional oxygen atom on a nitrogen site and the deep state to an O-related DX center, naturally explaining its high concentration. The sluggish kinetics at low temperatures, associated to the large concentration of deep levels located near the transition region, is illustrated by hysteresis loops in the C-V a curves below 270 K. Furthermore, the contribution of free carriers to the capacitance is revealed below 150 K, when both shallow and deep donors cannot respond anymore due to an emission rate lower than the 1 MHz modulating frequency. Finally, the presence of a highly doped thin surface barrier, as already reported in other III-nitrides, finds further support. V C 2015 AIP Publishing LLC. [http://dx.

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ABOVE 2 A/mm DRAIN CURRENT DENSITY OF GaN HEMTS GROWN ON SAPPHIRE

Cited by 5 publications

References 9 publications

Status of the Emerging InAlN/GaN Power HEMT Technology

Status of the Emerging InAlN/GaN Power HEMT Technology

Large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on sapphire substrate

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

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