Unraveling the Effect of the Water Content in the Electrolyte on the Resistive Switching Properties of Self-Assembled One-Dimensional Anodized TiO₂ Nanotubes

Abstract

The applied potential, time, and water content are crucial factors in the electrochemical anodization process because the growth of one-dimensional nanotubes can be accelerated by enhancing the corrosive effect. We investigated the effect of the water content on the resistive switching (RS) properties of Ti foils by anodizing the foils and varying the water content in an electrolyte (1–10 vol %). By increasing the water content, we facilitated a slow transition from nanopores to nanotubes and realized an increase in the tube wall diameter and tube length. All of the fabricated memristive devices exhibited a reliable and reproducible bipolar resistive switching effect. The optimized device exhibited bipolar RS properties with good dc endurance (104 cycles) and data retention capability (105 s). Our results suggest that as the water content increases to 5 vol %, the RS process improves; further increases in the water content impair the RS process.

Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation

“…Indeed, anodic oxidation is largely exploited in the fabrication of RS devices based on TMO such as HfO x , TaO x , TiO x , and also NbO x . [30][31][32][33][34][35][36][37][38][39][40] However, in the literature, few studies have been conducted on the anodic oxidation of niobium as a resistive switching layer. 30,[35][36][37]41 In this work, we report on a comprehensive investigation of the resistive switching mechanism in amorphous NbO x realized by anodic oxidation by combining the analysis of the resistive switching properties of Nb/NbO x /Au devices together with a detailed chemical, structural and morphological analysis of the NbO x layer and its interfaces.…”

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

“…Overall device performance is decided by many factors; however, the active switching layer is one of the major aspects of all. In recent years, our research group actively engaged in a synthesizing variety of switching layer materials by using different synthesis techniques for nonvolatile memory and neuromorphic computing applications. ,,− ,− There are three main categories of nanomaterial/thin film synthesis viz. physical, chemical, and biological methods.…”

Tetraphenylethene Carbothioamide‐Based Organic Stimuli‐Responsive Mechanochromic Memristive Devices with Non‐Volatile Memory and Synaptic Learning Functionalities

“…In this effect, the device can show either digital or analog current‐voltage (I‐V) properties based on the intrinsic characteristics of the active switching layer, top electrode, and bottom electrode. The device with a digital RS effect is useful for non‐volatile memory applications, whereas, biological synaptic properties can be mimicked by using the analog RS effect [5] . In recent years, a variety of materials such as organic, oxide, perovskite, 2D materials, biomaterials, etc.…”

“…The device with a digital RS effect is useful for non-volatile memory applications, whereas, biological synaptic properties can be mimicked by using the analog RS effect. [5] In recent years, a variety of materials such as organic, oxide, perovskite, 2D materials, biomaterials, etc. are being used to demonstrate the RS effect.…”