Universal properties of linear magnetoresistance in strongly disordered MnAs-GaAs composite semiconductors

Abstract

Linear magnetoresistance ͑LMR͒ occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite material, it is found that the magnitude of the LMR is numerically equal to the carrier mobility over a wide range and is independent of carrier density. This behavior is complementary to the Hall effect that is independent of the mobility and dependent on the carrier density. Moreover, the LMR appears to be insensitive to the details of the disorder and points to a universal explanation of classical LMR that can be applied to other material systems.

Angular-dependences of giant in-plane and interlayer magnetoresistances in Bi2Te3 bulk single crystals

“…26 LMR can also occur in semiconductors as a consequence of strong electrical disorder, which is related to the carrier mobility, but is independent of carrier density. 27 The well known anisotropic MR is always observed in ferromagnetic materials, which results from s-d scattering. 28 In addition, anisotropic MR also can result from the anisotropy of the Fermi surface because of the anisotropic effective mass and scattering effects.…”

Magnetoresistance of doped silicon

“…The relation between s (upper horizontal axis) and B (lower horizontal axis) is given by Eq. (20). Now, what causes the negative magnetoresistance?…”

“…We have adjusted the spin-susceptibility enhancement-factor (χ/χ 0 ) appearing in Eq. (20) to get a reasonable fit between the theoretical and experimental curves. The adjustment only affects the theoretical curves in the horizontal direction.…”

“…Lately much research has been devoted to systems with positive magnetoresistance showing a linear dependence on the applied magnetic field [20,21]. Several mechanisms have been suggested to explain this behavior from geometrical [22], classical [23][24][25], quantum [26,27], and effective medium [28,29] perspectives.…”

Giant and anisotropic magnetoresistances in p-type Bi-doped Sb 2 Te 3 bulk single crystals

“…They are also positive and have transitions from a quadratic field dependence at low fields to a linear dependence at higher fields. And the high-field MR was found to be linear at all temperatures ranges [25]. …”