Magnetoresistance of doped silicon

Silva, Antônio Ferreira da; Levine, A.; Momtaz, Zahra Sadre; Boudinov, H.; Sernelius, Bo E.

doi:10.1103/physrevb.91.214414

Cited by 9 publications

(3 citation statements)

References 40 publications

(46 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Neither hopping transport 64 nor doping above the metal-insulator transition of Si can cause a large magnetoresistance in Si. 65 The temperature and magnetic field dependence of the sheet resistance in the Si:Ga films is well described by a simple phenomenological model based on localized Cooper pairs and hopping quasiparticles. It is supposed that this model can explain the low-temperature magnetotransport properties of many other inhomogeneous insulating films.…”

Section: Discussionmentioning

confidence: 99%

Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

2016

View full text Add to dashboard Cite

We report on large negative and positive magnetoresistance in inhomogeneous, insulating Si:Ga films below a critical temperature of about 7 K. The magnetoresistance effect exceeds 300 % at temperatures below 3 K and fields of 8 T. The comparison of the transport properties of superconducting samples with that of insulating ones reveals that the large magnetoresistance is associated with the appearance of local superconductivity. A simple phenomenological model based on localized Cooper pairs and hopping quasiparticles is able to describe the temperature and magnetic field dependence of the sheet resistance of such films.

show abstract

Section: Discussionmentioning

confidence: 99%

Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

2016

View full text Add to dashboard Cite

show abstract

“…Let's break it down; Defects as scattering centers: Defects such as vacancies, interstitials, or impurities can act as scattering centers for charge carriers. When charge carriers encounter these defects, they experience scattering, reducing their mobility and decreasing electrical conductivity [32]. Higher defect concentrations would result in increased scattering, leading to a more significant decrease in conductivity; Defects as dopants: Impurities or defects can also act as dopants, introducing additional charge carriers into the material.…”

Section: Electrical and Magnetic Parametersmentioning

confidence: 99%

Extraordinary Magnetoresistance of Laserannealed Nano Boron Depositedon Oxidized Porous Silicon

Abdulzahra¹

2023

Eurasian phys. tech. j.

View full text Add to dashboard Cite

This study explores the impact of laser annealing on the electrical and magnetic properties of nano boron deposited on oxidized porous silicon (n-B/PSiO2) and its potential for spintronic applications. The Nd: YAG laser was used at varying energies to anneal the n-B thin films. Increasing the laser energy increased grain size and more ordered grain structures. It also increased surface roughness due to forming new grain boundaries and secondary phases. The electrical properties of the material were also affected by the laser annealing, with an increase in forward and reverse current and an increase in electrical resistivity with increased annealing temperature. The study also found that the magnetoresistance of the material increased with increasing laser temperature, attributed to tunnel injection through the thin silicon dioxide layer, and could be up to 7 times higher than non-annealed n-B/PSiO2in a magnetic field. The study highlights the importance of controlling materials’ grain size and structure for their physical and electrical properties. In addition, it provides insights into the electronic properties of n-B/PSiO2and the behavior of charge carriers in a magnetic field.

show abstract

“…The influence of deformation on the magnetoresistance of doped silicon was studied in works [1][2][3]. A number of interesting features of magnetoresistance behavior of silicon and silicon-germanium solid solution whiskers of p-type conductivity with different doping concentration in the vicinity to metal-insulator transition (MIT) have been identified in a wide temperature range 4.2-300 K [2,3].…”

Section: Introductionmentioning

confidence: 99%

Berry phase appearance in deformed indium antimonide and gallium antimonide whiskers

Druzhynin,

Ostrovskyi,

Khoverko

et al. 2019

Comput. probl. electr. eng.

View full text Add to dashboard Cite

The influence of deformation on magnetoresistance features in indium antimonide and gallium antimonide whiskers of n-type conductivity with different doping concentration in the vicinity to the metal-insulator transition (MIT) has been investigated in the temperature range 4.2 – 50 K and the magnetic field 0 – 14 T. The Shubnikov-de Haas oscillations in the whole range of magnetic field inductions have been shown in deformed and undeformed whiskers. The amplitude of the magnetoresistance oscillations for both type of samples decreases in accordance with the increase in temperature. Berry phase existence under deformation influence has been also revealed at low temperatures in the indium antimonide and galium antimonide whiskers, that indicates their transition into the state of topological insulators.

show abstract

Magnetoresistance of doped silicon

Cited by 9 publications

References 40 publications

Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

Extraordinary Magnetoresistance of Laserannealed Nano Boron Depositedon Oxidized Porous Silicon

Berry phase appearance in deformed indium antimonide and gallium antimonide whiskers

Contact Info

Product

Resources

About