Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

Heera, V.; Fiedler, J.; Skorupa, W.

doi:10.1063/1.4964931

Cited by 2 publications

(1 citation statement)

References 64 publications

(87 reference statements)

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“…Higher temperatures of conventional longterm annealing led to Ga clustering. In order to reduce acceptor diffusion and clustering, flash lamp annealing (FLA) in the ms-range without layer melting is an appropriate method [25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium

Prucnal

Heera

Hübner

et al. 2019

Phys. Rev. Materials

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Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10 21 cm -3 . Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al-and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values.

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Section: Introductionmentioning

confidence: 99%

Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium

Prucnal

Heera

Hübner

et al. 2019

Phys. Rev. Materials

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The effect of external electric fields on silicon with superconducting gallium nano-precipitates

Thorgrimsson

McJunkin

MacQuarrie

et al. 2020

Journal of Applied Physics

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Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements and by the advantages of integrating these elements in a silicon material platform, we investigate the properties of the superconductivity of silicon ion implanted with gallium. Here, we measure 40 different samples and explore both a variety of preparation methods (yielding both superconducting and non-superconducting samples) and the reproducibility of one of the preparation methods yielding superconducting samples. While we find agreement with the existing literature that superconducting effects are visible in this system, we also find that this superconductivity is not influenced by voltages applied to a top gate. The superconductivity in this material system is not gateable for applied electric fields as large as 8 MV/cm. We also present results of scanning transmission electron microscopy imaging of some of the same samples for which we report electronic characterization. In agreement with the existing literature, we find that the presence of Ga precipitates is essential for the presence of a superconducting transition in these samples. However, we also find evidence for large inhomogeneities in this system, which we discuss in connection with the lack of gateability we report here.

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Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

Cited by 2 publications

References 64 publications

Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium

Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium

The effect of external electric fields on silicon with superconducting gallium nano-precipitates

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