Universal Density of States for Carbon Nanotubes

Mintmire, J. W.; White, C. T.

doi:10.1103/physrevlett.81.2506

Cited by 560 publications

(347 citation statements)

References 14 publications

Supporting

Mentioning

326

Contrasting

Unclassified

Order By: Relevance

“…2 are the DOS's of SWCNT for a number of chiral vectors under 0, 1, 2 and 3 percents of uniaxial strain calculated using nearest neighbor tight binding model (1-NN-TB model). For zero percent of strain our model perfectly matches that of [6]. From the band gap point of view and in the case uniaxial strain, the band gap change is maximum for the zig-zag nantubes and minimum for armchair nanotubes.…”

Section: Methodssupporting

confidence: 64%

“…al. [6] investigated DOS of SWCNTs using π-TB model. The advantage of π-TB model over the other models for the calculation of the electronic band structure is the simplicity of the method, medium to good accuracy and in a wide variety of cases, the analytical formula for the energy which enables us to perform some analyzes about the energy and the dependencies.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The effect of uniaxial and torsional strains on the Density of States of Single Walled Carbon Nanotubes

Pakkhesal

Hosseini

2017

Scientia Iranica

View full text Add to dashboard Cite

Abstract-In this paper we investigate the effect of uniaxial and torsional strains on the Density of States (DOS) of single walled Carbon nanotubes (SWCNTs). We employ the nearest neighbor and the third nearest neighbor π-TB (Tight Binding) models for our investigation. It is shown that uniaxial and torsional strains in some cases of metallic SWCNTs not only open a band gap but also effectively increase the DOS of SWCNT. It is also shown that, the mentioned types of strain have different effects on the DOS of chiral SWCNTs; in some types, they increase the DOS at the band edges while in other types they decrease it at the band edges.

show abstract

Section: Methodssupporting

confidence: 64%

Section: Introductionmentioning

confidence: 99%

The effect of uniaxial and torsional strains on the Density of States of Single Walled Carbon Nanotubes

Pakkhesal

Hosseini

2017

Scientia Iranica

View full text Add to dashboard Cite

show abstract

“…To estimate the number of conducting channels, a full calculation could be done as in our previous work [32], but a rough estimation is also possible using [37] (metallic i = 0, 3, 6, . .…”

Section: Raman Spectroscopymentioning

confidence: 99%

Charged iodide in chains behind the highly efficient iodine doping in carbon nanotubes

Zubair

Tristant

Nie

et al. 2017

Phys. Rev. Materials

View full text Add to dashboard Cite

The origin of highly efficient iodine doping of carbon nanotubes is not well understood. Relying on firstprinciples calculations, we found that iodine molecules (I 2 ) in contact with a carbon nanotube interact to form monoiodide or/and polyiodide from two and three I 2 as a result of removing electrons from the carbon nanotube (p-type doping). Charge per iodine atom for monoiodide ion or iodine atom at end of iodine chain is significantly higher than that for I 2 . This atomic analysis extends previous studies showing that polyiodide ions are the dominant dopants. Moreover, we observed isolated I atoms in atomically resolved transmission electron microscopy, which proves the production of monoiodide. Finally, using Raman spectroscopy, we quantitatively determined the doping level and estimated the number of conducting channels in high electrical conductivity fibers composed of iodine-doped double-wall carbon nanotubes.

show abstract

“…All our calculations assume a CNT with 0.6 eV band gap, corresponding to a diameter of 1.4 nm [8]. We performed simulations for both symmetric and asymmetric structures.…”

Section: Resultsmentioning

confidence: 99%

Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors

Pourfath

Ungersboeck

Gehring

et al. 2004

Simulation of Semiconductor Processes and Devices 2004

View full text Add to dashboard Cite

Two-dimensional (2D) and three-dimensional (3D) electrostatic analyses of Schottky barrier carbon nanotube field effect transistors (CNTFETs) are carried out. Comparisons between 2D and 3D simulation results for symmetric and asymmetric structures indicate that 2D simulations do not describe the behavior of the device accurately, suggesting that to understand and improve the behavior of CNTFETs 3D electrostatic analysis is required.

show abstract

Universal Density of States for Carbon Nanotubes

Cited by 560 publications

References 14 publications

The effect of uniaxial and torsional strains on the Density of States of Single Walled Carbon Nanotubes

The effect of uniaxial and torsional strains on the Density of States of Single Walled Carbon Nanotubes

Charged iodide in chains behind the highly efficient iodine doping in carbon nanotubes

Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors

Contact Info

Product

Resources

About