Uniform Plating of Thin Nickel Layers for Silicon Solar Cells

Yu, Yao; Rodriguez, John; Cui, Jie; Lennon, Alison; Wenham, Stuart

doi:10.1016/j.egypro.2013.07.350

Cited by 26 publications

(14 citation statements)

References 13 publications

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“…This cell result is comparable to the results obtained by Yao Y. et al[6] for cells patterned using the direct etching method.…”

supporting

confidence: 94%

“…Although in previous work only 1 min galvanic nickel displacement was sufficient to uniformly cover the exposed silicon surface [6], the plating time was extended to 3 min under the same light intensity in this work presumably because the light used to generate the electron-hole pairs at the surface during the galvanic nickel plating process was partially blocked by the photoresist (see Fig. 3).…”

Section: Metallizationmentioning

confidence: 93%

“…Metallization of the exposed silicon grid was achieved by galvanic nickel displacement [6] to grow a thin nickel layer followed by a lO-min copper light-induced plating process. Then, the photoresist was removed by immersion in N methyl-2-pyrrolidone.…”

Section: Methodsmentioning

confidence: 99%

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Patterning and metallization of silicon solar cells by inkjet-printed functional ink on a photoresist layer

Chen

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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This paper reports a patterning and metallization method for silicon solar cells fabrications. Patterning was achieved by the inkjet printing of a dye-based ink as a mask to protect the photoresist from UV-light initiated crosslinking. The patterned photoresist was used to facilitate the etching of a pattern in the underlying dielectric layer and also to act as a metal plating mask. This method resulted in fine point openings in the photoresist layer with a diameter of 15 Jim and line openings with a width of 30 Jim. Nickel/copper plated homogeneous emitter silicon solar cells with an efficiency of 18.2% on small size Cz wafers were fabricated using this method, may find applications in the metallization of future heterojunction, rear contact and PERC cells.

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“…This cell result is comparable to the results obtained by Yao Y. et al[6] for cells patterned using the direct etching method.…”

supporting

confidence: 94%

Section: Metallizationmentioning

confidence: 93%

See 1 more Smart Citation

Patterning and metallization of silicon solar cells by inkjet-printed functional ink on a photoresist layer

Chen

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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“…Furthermore, Ni is a promising material for application in microelectronic devices because of its low electrical resistivity and high oxidation resistance [1]. Particularly, Ni possesses optical properties that are ideal for replacement of silver toward the preparation of cheaper mirrors for domestic use [2,3] as well as for use in solar thermal and solar thermionic applications-such properties allow for the fabrication of films that can exhibit excellent absorption over the entire solar spectrum [4]. Moreover, for such applications, the smooth surface, fine grain, and homogenous structure of Ni thin films are of critical importance.…”

Section: Introductionmentioning

confidence: 99%

Properties of nickel films growth by radio frequency magnetron sputtering at elevated substrate temperatures

et al. 2016

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“…These challenges have made it necessary to develop alternative electrode materials and methods of fabrication [8][9][10][11][12][13][14][15][16][17]. A current, widely-used method for manufacturing highly-efficient solar cells is the Ni/Cu plating method, in which plating is deposited onto the metallic electrode.…”

Section: Introductionmentioning

confidence: 99%

Selectivities of an all-wet-processed electrode film on ITO, ZnO, SiNx and doped Si for solar cell applications

Kim

Choi

Lee

et al. 2014

Journal of the Korean Physical Society

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We investigated the role of Ni/Cu metallization and the characteristics of selective thin-film deposition on the Indium tin oxide (ITO), ZnO, SiNx and doped Si surfaces of a silicon solarcell electrode. We propose Ni/Cu metallization as an alternative to silver screen-printing. Our method, called the selective electrode formation (SEF) process, utilizes a low-cost, streamlined wet chemical process. Metallization was confirmed to occur on the Si electrode with adhesion through Pd activation. Ni, which hinders Cu diffusion, was then selectively deposited from a NaH2PO2 based nickel solution, and Cu, the main electrode material, was deposited from a HCHObased copper solution. Ni/Cu was deposited on the ZnO, ITO, or SiNx film. The deposition and the heat treatment of Ni and Cu were successfully performed on a substrate consisting of a patterned n + -doped wafer with POCl3 by maintaining the same steady process conditions as in process.

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Uniform Plating of Thin Nickel Layers for Silicon Solar Cells

Cited by 26 publications

References 13 publications

Patterning and metallization of silicon solar cells by inkjet-printed functional ink on a photoresist layer

Patterning and metallization of silicon solar cells by inkjet-printed functional ink on a photoresist layer

Properties of nickel films growth by radio frequency magnetron sputtering at elevated substrate temperatures

Selectivities of an all-wet-processed electrode film on ITO, ZnO, SiNx and doped Si for solar cell applications

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