Uniform-carrier-concentration p-type layers in GaAs produced by beryllium ion implantation

Abstract

Multiple-energy Be+ ion implantation has been used to create uniform-carrier-concentration p-type layers (≳1.5 μm thick) in GaAs. The implanted samples were annealed at 900 °C using pyrolytic Si3N4 as an encapsulant. High activation of the implanted Be was observed. On samples with implanted hole concentrations of 2×1018/cm3, the measured carrier concentration as a function of depth is in good agreement with that expected from LSS range theory. For higher doses, diffusion of the implanted Be was observed. p+n−n+ junctions formed by implantation into undoped epitaxial material have low leakage currents and sharp breakdowns at average electric fields in the n− region of 1.5×105 V/cm.

Current Spreading in Back-Contacted GaInP/GaAs Light-Emitting Diodes

“…The base structure of the device is a p-GaInP/i-GaAs/n-GaInP DHJ (200/300/300 nm) grown on a p-GaAs substrate, followed by a 100 nm thick n-AlGaAs layer and a 20 nm thick n-GaAs contact layer. The LHJs can be fabricated with a selective-area doping method, such as diffusion doping [35], [36] or ion-implantation [37], to form p-doped regions in the n-doped layers above the AR. The p-regions extend ideally from the p-contact metal to the edge of the AR in the vertical direction.…”

SIMS Studies of 9Be Implants in Semi‐Insulating InP

“…In the last several years a number of publications by Davies There exists a need for controllable acceptor doping of InP in several of the applications mentioned above. Beryllium has already proven to be a useful implanted acceptor with good electrical activation in GaAs and GaAso.6P0.4 (20)(21)(22)(23). Low dark current avalanche photodiodes can be constructed from structures incorporating an InP p-n junction above a detecting InGaAsP layer (15).…”

Interdigitated back‐contact double‐heterojunction GaInP/GaAs solar cells

“…The DDCT solar cell structure can be fabricated with a straightforward lithography process combined with a p-doping process. [21][22][23][24] Therefore, realizing DDCT cells should be simpler and easier as compared to the previously studied EBAC designs 17,18 relying on a selective-area growth (SAG) process, which is generally demanding for III-arsenide materials and reported only in a few papers, for example, in other studies. [25][26][27] In addition, originating from the high-power large-area LED context, the DDCT approach provides interesting possibilities for concentration photovoltaics.…”

“…and epitaxial lift-off (ELO). [32][33][34] Also, selective area diffusion doping from solid sources [21][22][23] or ion implantation 24 needs to be used to form the p-doped regions of the LHJs. The reference structure illustrated in Figure 1C is a planar thin-film solar cell based on a more conventional GaInP/GaAs double-heterojunction (DHJ) structure.…”