Uniform, Axial‐Orientation Alignment of One‐Dimensional Single‐Crystal Silicon Nanostructure Arrays

Peng, Kui‐Qing; Yin, Wang; Fang, Hui; Zhong, Xiaoyan; Xu, Ying; Zhu, Jing

doi:10.1002/ange.200462995

Cited by 86 publications

(86 citation statements)

References 30 publications

(27 reference statements)

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“…However, more recently, contradictory reports have shown the formation of slanted NWs from substrates with these orientations [59,80,[118][119][120]. Furthermore, non-(100) substrates have shown preferential etching in the (100) direction [59,80,[118][119][120]. It was found that for (100) wafers with resistivities of 6-8 Ω·cm, vertical (100) Si NWs were formed at a volumetric ratio of 3:1 HF:H 2 O 2 , while (111) Si NWs were generated when the HF concentration was increased [91].…”

Section: Orientation Control Of Si Nws Using Mac Etchingmentioning

confidence: 98%

“…The etching mechanism proposed by Peng et al [60] begins with the electroless deposition of Ag particles on the Si substrate. This occurs via two simultaneous electrochemical processes on the Si surface.…”

Section: Mac Etching Processmentioning

confidence: 99%

“…Initially, it was shown that etching in (100) and (111) Si occurred in the vertical direction only [59,118]. However, more recently, contradictory reports have shown the formation of slanted NWs from substrates with these orientations [59,80,[118][119][120].…”

Section: Orientation Control Of Si Nws Using Mac Etchingmentioning

confidence: 99%

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Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes

2015

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This review outlines the developments and recent progress in metal-assisted chemical etching of silicon, summarizing a variety of fundamental and innovative processes and etching methods that form a wide range of nanoscale silicon structures. The use of silicon as an anode for Li-ion batteries is also reviewed, where factors such as film thickness, doping, alloying, and their response to reversible lithiation processes are summarized and discussed with respect to battery cell performance. Recent advances in improving the performance of silicon-based anodes in Li-ion batteries are also discussed. The use of a variety of nanostructured silicon structures formed by many different methods as Li-ion battery anodes is outlined, focusing in particular on the influence of mass loading, core-shell structure, conductive additives, and other parameters. The influence of porosity, dopant type, and doping level on the electrochemical response and cell performance of the silicon anodes are detailed based on recent findings. Perspectives on the future of silicon and related materials, and their compositional and structural modifications for energy storage via several electrochemical mechanisms, are also provided.

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Section: Orientation Control Of Si Nws Using Mac Etchingmentioning

confidence: 98%

Section: Mac Etching Processmentioning

confidence: 99%

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Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes

2015

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“…In recent years, a simple Ag catalytic etching technique has been used to prepare large-area, aligned SiNW arrays on single-crystal silicon wafers [29][30][31][32]. The location, size, length and orientation control of silicon nanowire arrays have been established by catalytic etching through a pre-patterned template.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications

2011

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High density vertically aligned and high aspect ratio silicon nanowire (SiNW) arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene (PS) nanospheres with diameter 30-50 nm and density 10 10 /cm 2 , produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio (~100), high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT:PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT:PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/cm 2 to 21.1 mA/cm 2 and improvement in power conversion efficiency from 0.4% to 5.7%.

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“…[16] Unlike other as-grown SiNWs with unknown impurities and properties, our as-etched SiNWs inherited well-defined properties from mother silicon wafers, so that they would serve as a model material for the study of surface effects. The typical diameter of the as-etched SiNWs was around 100 nm and well above the quantum size region.…”

mentioning

confidence: 99%

Surface Passivation and Transfer Doping of Silicon Nanowires

et al. 2009

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Uniform, Axial‐Orientation Alignment of One‐Dimensional Single‐Crystal Silicon Nanostructure Arrays

Cited by 86 publications

References 30 publications

Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes

Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes

Fabrication of large area high density, ultra-low reflection silicon nanowire arrays for efficient solar cell applications

Surface Passivation and Transfer Doping of Silicon Nanowires

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