Surface Passivation and Transfer Doping of Silicon Nanowires

Guo, Chunsheng; Luo, Lin‐Bao; Yuan, Guodong; Yang, Xiao‐Bao; Qi, Fei; Zhang, Wenjun; Lee, Shuit‐Tong

doi:10.1002/anie.200904890

Cited by 60 publications

(42 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, Guo et al have reported that the conductivity of Si nanowires can be modulated by the change of surface passivants. 17 The modulation of conductivity substantially arises from the tunable band structures of Si nanowires by the surface passivation. Simpkins et al 18 have shown that the deposition of SiN x in the surface of GaN nanowires reduces significantly the trap density by a factor of $4 resulting in the improvement of the transport properties of nanowires.…”

Section: Tailoring Electronic Properties Of Inas Nanowires By Surfacementioning

confidence: 99%

Tailoring electronic properties of InAs nanowires by surface functionalization

Shu

Liang

Wang

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

Structures, spectra, and electronic properties of halide-water pentamers and hexamers, X − ( H 2 O ) 5,6 ( X = F,Cl,Br,I ): Ab initio studyThe effect of surface functionalization on the electronic properties of InAs nanowires is investigated by the first-principle calculations. Several surface adsorption species (H, F, Cl, Br, and I) with different coverages are considered. It is found that the electronic structures of InAs nanowires are sensitive to the coverage and adsorption sites of the passivating atoms. The band-gap magnitude of InAs nanowires depends on the suppression of surface states as determined by the charge-compensation ability of passivating atoms to surface atoms. For the halogen passivation, the weak charge-compensation ability induces the band-gap reduction when compared to the hydrogen passivation. The results provide us a feasible way to engineer the bandgap of nanowires by the modification of surface species.

show abstract

Section: Tailoring Electronic Properties Of Inas Nanowires By Surfacementioning

confidence: 99%

Tailoring electronic properties of InAs nanowires by surface functionalization

Shu

Liang

Wang

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…In SiNWs, the possibility that an adsorbed molecule could provide shallow electronic states has received less attention, though some promising experimental results have been recently reported [25,26]. This is relevant because traditional substitutional dopants in Si have too large activation energies in thin SiNWs [27,28].…”

Section: Introductionmentioning

confidence: 99%

NH3 molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations

et al. 2012

View full text Add to dashboard Cite

The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). We show that molecular-based ex-situ doping, where NH3 is adsorbed at the sidewall of the SiNW, can be an alternative path to n-type doping. By means of first-principle electronic structure calculations, we show that NH3 is a shallow donor regardless of the growth orientation of the SiNWs. Also, we discuss quantum confinement and its relation with the depth of the NH3 doping state, showing that the widening of the bandgap makes the molecular donor level deeper, thus more difficult to activate.

show abstract

“…Several groups have reported surface effects have strong influence on the doping type and conductivity of semiconductor NW. 10,11 Before PEC test, NW samples were dipped into 5% HF solution to remove native oxide, Si-H bond was easily formed on NW surface. S.-T. Lee et al 10 reported that, due to 'electron pulling' by the terminating hydrogen, electrons would transfer from Si core to the surface, this transfer is negligible for bulk silicon but is significant for surface-dominated SiNWs whose carrier concentration could be considerably high.…”

Section: Photoelectrochemical Properties Of Umg-sinwsmentioning

confidence: 99%

Nanowires from dirty multi-crystalline Si for hydrogen generation

Schweizer

Sprafke

et al. 2013

Solar Hydrogen and Nanotechnology VIII

View full text Add to dashboard Cite

Silicon nanowires are considered as a promising architecture for solar energy conversion systems. By metal assisted chemical etching of multi-crystalline upgraded metallurgical silicon (UMG-Si), large areas of silicon nanowires (SiNWs) with high quality can be produced on the mother substrates. These areas show a low reflectance comparable to black silicon. More interestingly, we find that various metal impurities inside UMG-Si are removed due to the etching through element analysis. A prototype cell was built to test the photoelectrochemical (PEC) properties of UMG-SiNWs for water splitting. The on-set potential for hydrogen evolution was much reduced, and the photocurrent density showed an increment of 35% in comparison with a 'dirty' UMG-Si wafer.

show abstract

Surface Passivation and Transfer Doping of Silicon Nanowires

Cited by 60 publications

References 25 publications

Tailoring electronic properties of InAs nanowires by surface functionalization

Tailoring electronic properties of InAs nanowires by surface functionalization

NH3 molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations

Nanowires from dirty multi-crystalline Si for hydrogen generation

Contact Info

Product

Resources

About