Unidirectional spin-orbit interaction and spin-helix state in a (110)-oriented GaAs/(Al,Ga)As quantum well

Chen, Yuansen; Fält, Stefan; Wegscheider, Werner; Salis, G.

doi:10.1103/physrevb.90.121304

Cited by 37 publications

(29 citation statements)

References 41 publications

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“…Experiments directed explicitly towards helical spin structures were performed by Chen et al (2014) who studied [110]-grown GaAs quantum wells using timeresolved Kerr microscopy. To generate a finite net spinorbit field averaged over the the Fermi contour, the Fermi disk was shifted from its equilibrium position by applying a DC current of up to 200µA.…”

Section: [110] Quantum Wellsmentioning

confidence: 99%

Colloquium: Persistent spin textures in semiconductor nanostructures

2017

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Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling electron spins in semiconductors are generically subject to rather fast decoherence. In two-dimensional quantum wells made of zinc-blende semiconductors, however, the spin-orbit interaction can be engineered in such a way that persistent spin structures with extraordinarily long spin lifetimes arise even in the presence of disorder and imperfections. We review experimental and theoretical developments on this subject both for n-doped and p-doped structures, and we discuss possible device applications.

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Section: [110] Quantum Wellsmentioning

confidence: 99%

Colloquium: Persistent spin textures in semiconductor nanostructures

2017

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“…Our results for bulk InGaAs demonstrate that the electric field dependence here must be due to a different mechanism than the wave function shift. A change in the g-factor with in-plane electric field was recently reported in a QW 7 .…”

mentioning

confidence: 99%

g-factor modification in a bulk InGaAs epilayer by an in-plane electric field

et al. 2015

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We report on the modification of the g-factor by an in-plane electric field in an In0.031Ga0.969As epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to independently determine the g-factor and the spin-orbit fields. The g-factor increases from −0.4473 ± 0.0001 at 0 V/cm to −0.4419 ± 0.0001 at 25 V/cm applied along the [110] crystal axis. In addition, spatially-resolved spin measurements show a g-factor dependence on diffusive velocity. The change in g-factor with electric field can have a large effect on the determination of the internal spin-orbit and nuclear fields from Larmor precession frequency measurements.

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“…The closest systems with comparable or even slightly better spintransport properties are (110)-grown GaAs quantum wells [26,27], where spin-transport distances can reach 100 μm with an electron mobility of 10 5 -10 6 cm 2 V −1 s −1 . However, in these systems, the confinement of carriers is strong and robustly defined by the doping, and, thus, the spin polarization cannot be removed from the quantum well using the same fast mechanism as in our case.…”

Section: Discussionmentioning

confidence: 99%

Fast Optical Control of Spin in Semiconductor Interfacial Structures

et al. 2017

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We report on a picosecond-fast optical removal of spin polarization from a self-confined photocarrier system at an undoped GaAs=ðAl; GaÞAs interface possessing superior long-range and high-speed spintransport properties. We employ a modified resonant-spin-amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photoinjected into the system.

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Unidirectional spin-orbit interaction and spin-helix state in a (110)-oriented GaAs/(Al,Ga)As quantum well

Cited by 37 publications

References 41 publications

Colloquium: Persistent spin textures in semiconductor nanostructures

Colloquium: Persistent spin textures in semiconductor nanostructures

g-factor modification in a bulk InGaAs epilayer by an in-plane electric field

Fast Optical Control of Spin in Semiconductor Interfacial Structures

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