2017
DOI: 10.1103/physrevapplied.8.034022
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Fast Optical Control of Spin in Semiconductor Interfacial Structures

Abstract: We report on a picosecond-fast optical removal of spin polarization from a self-confined photocarrier system at an undoped GaAs=ðAl; GaÞAs interface possessing superior long-range and high-speed spintransport properties. We employ a modified resonant-spin-amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the… Show more

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Cited by 3 publications
(2 citation statements)
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References 37 publications
(103 reference statements)
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“…In Fig. 4(b) we show the experimental data measured by these two filtration methods, which demonstrate the very slow damping of the electron spin precession in the studied sample [15,24]. Interestingly, the data measured by the spectral-filtration have a larger amplitude of the measured MO signal.…”
Section: Heterostructurementioning
confidence: 86%
See 1 more Smart Citation
“…In Fig. 4(b) we show the experimental data measured by these two filtration methods, which demonstrate the very slow damping of the electron spin precession in the studied sample [15,24]. Interestingly, the data measured by the spectral-filtration have a larger amplitude of the measured MO signal.…”
Section: Heterostructurementioning
confidence: 86%
“…4(e). This procedure is extremely useful in the case of the studied material system where the observed long-range and high-speed electronic spin-transport is present only in a very thin layer of GaAs close to the GaAs/AlGaAs interface, which is formed by a built-in electric field that is separating the photogenerated electrons and holes [15,24]. The standard (time-unresolved) experimental techniques for measuring the MOKE spectrum [26] would provide information only about the spatially-averaged magnetooptical properties of the sample, which would be the one corresponding to undoped GaAs in our case.…”
Section: Heterostructurementioning
confidence: 99%