Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial

Guo, Jianqiu; Yang, Yu; Raghothamachar, Balaji; Kim, Tae-Jin; Dudley, Michael; Kim, Jungyu

doi:10.1016/j.jcrysgro.2017.10.015

Cited by 31 publications

(28 citation statements)

References 12 publications

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“…J. Guo et al reported triangular defects with different morphologies and proposed their formation mechanism. 15 The 3C nuclei can grow in all directions, and eventually, coalesce with each other. Continuous flows of 4H-SiC growth steps can eventually overgrow the entire layer of 3C, leaving a smooth surface at the top.…”

Section: Resultsmentioning

confidence: 99%

“…Besides, triangular defects with a washboard-like surface morphology have also been systematically investigated by a few research groups. 13–16 Accordingly, the formation mechanisms for a large triangular terrace have been proposed. However, the boundary structure between the triangular defect and the normal 4H-SiC has not been analyzed in detail.…”

Section: Introductionmentioning

confidence: 99%

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Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers

Bai

et al. 2022

CrystEngComm

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers

Bai

et al. 2022

CrystEngComm

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“…Micropipes limit the operation current [ 94 ] while SFs reduce carrier lifetime [ 111 ]. Carrots and polytype inclusions reduce blocking voltage and increase leakage current and reduce carrier lifetime [ 84 , 112 ].…”

Section: Impact Of Defects On Devicesmentioning

confidence: 99%

Defect Inspection Techniques in SiC

et al. 2022

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With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

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“…Traditional semiconductor devices have difficulty reaching high frequencies, high temperatures, and high power. Silicon carbide (SiC), a new-generation semiconductor material, has the advantages of a wide band gap, high thermal conductivity, high electron-drift rate, high breakdown field strength, and stable physical and chemical properties [1] and is expected to be widely used in fields with extreme environments such as aerospace, electric power transmission, and nuclear energy.…”

Section: Introductionmentioning

confidence: 99%

Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC

Chang

Xiao

et al. 2021

Crystals

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Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical model of polarized Raman intensity was established by considering the birefringence effect. The distributions of angle-resolved Raman intensities were achieved under normal and oblique backscattering configurations. Experiments were performed on a self-built angle-resolved Raman system, which verified the validity of the proposed model and achieved the identification of crystal orientations of the 4H-SiC sample.

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Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial

Cited by 31 publications

References 12 publications

Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers

Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers

Defect Inspection Techniques in SiC

Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC

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