Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers

Yu, Jinying; Yu, Yi; Bai, Zhiqiang; Peng, Ying; Tang, Xiaoyan; Hu, Xiaobo; Xie, Xuejian; Xu, Xiaofeng; Chen, Xiufang

doi:10.1039/d1ce01606g

Cited by 3 publications

(2 citation statements)

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“…These triangular defects showed different surface morphologies [9][10][11][12][13][14]. Studies on the 4H/3C boundary have shown that the 4H and 3C structures exhibit a coherent crystallographic orientation relationship, and the (0001) planes in the 4H-SiC are coherently connected to the (111) planes of the 3C-SiC [9]. Additionally, 3C-SiC nanowires with different states of stacking faults were observed.…”

Section: Introductionmentioning

confidence: 99%

“…According to the report, the triangular defects, which were intrinsically 3C-SiC polytype inclusions, were observed in the fabrication of 4H-SiC epitaxial layers grown via the CVD method [7,8]. These triangular defects showed different surface morphologies [9][10][11][12][13][14]. Studies on the 4H/3C boundary have shown that the 4H and 3C structures exhibit a coherent crystallographic orientation relationship, and the (0001) planes in the 4H-SiC are coherently connected to the (111) planes of the 3C-SiC [9].…”

Section: Introductionmentioning

confidence: 99%

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Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Yin,

Shi,

et al. 2023

Nanomaterials

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Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices. The existence of stacking faults, which originate from the “wrong” stacking sequences of Si–C bilayers, is a general feature of SiC. However, the effects of stacking faults on the thermal properties of SiC are not well understood. In this study, we evaluated the accuracy of Tersoff, MEAM, and GW potentials in describing the thermal transport of SiC. Additionally, the thermal conductivity of 3C/4H-SiC nanowires was investigated using non-equilibrium molecular dynamics simulations (NEMD). Our results show that thermal conductivity exhibits an increase and then saturation as the total lengths of the 3C/4H-SiC nanowires vary from 23.9 nm to 95.6 nm, showing the size effect of molecular dynamics simulations of the thermal conductivity. There is a minimum thermal conductivity, as a function of uniform period length, of the 3C/4H-SiC nanowires. However, the thermal conductivities of nanowires weakly depend on the gradient period lengths and the ratio of 3C/4H. Additionally, the thermal conductivity of 3C/4H-SiC nanowires decreases continuously from compressive strain to tensile strain. The reduction in thermal conductivity suggests that 3C/4H-SiC nanowires have potential applications in advanced thermoelectric devices. Our study provides insights into the thermal transport properties of SiC nanowires and can guide the development of SiC-based thermoelectric materials.

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