2022
DOI: 10.1039/d2tc01869a
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Understanding and minimizing non-radiative recombination losses in perovskite light-emitting diodes

Abstract: Light-emitting diodes (LEDs) based on metal halide perovskites have shown great promise for next-generation display technology as they offer high color purity, satisfy Rec.2020, and have low-cost solution processability. Moreover,...

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Cited by 61 publications
(55 citation statements)
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“…It is known that for small layers in the inorganic part (low n-values) an increased phonon-assisted exciton recombination is expected in addition to free exciton recombination, which contributes to enhance in non-radiative recombination. 42,50 These dissipative coupled dynamics might contribute for lowering the lifetime for n = 1 and, furthermore, the result is in line with the low value of exciton binding energy estimated for this sample. On the other hand, a decay profile mediated by exciton recombination for n = 2 is truly suppressed t 2 = 11.1 ns (13.3%) and the trap-assisted recombination with t 1 = 1.38 ns (82.9%) becomes the dominant mechanism.…”
Section: (E) and (F))supporting
confidence: 87%
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“…It is known that for small layers in the inorganic part (low n-values) an increased phonon-assisted exciton recombination is expected in addition to free exciton recombination, which contributes to enhance in non-radiative recombination. 42,50 These dissipative coupled dynamics might contribute for lowering the lifetime for n = 1 and, furthermore, the result is in line with the low value of exciton binding energy estimated for this sample. On the other hand, a decay profile mediated by exciton recombination for n = 2 is truly suppressed t 2 = 11.1 ns (13.3%) and the trap-assisted recombination with t 1 = 1.38 ns (82.9%) becomes the dominant mechanism.…”
Section: (E) and (F))supporting
confidence: 87%
“…41 Here, each contribution is addressed as follows: trap-assisted t 1 , exciton recombination t 2 , and free-carrier recombination t 3 . 42 The estimated values are summarized in Table 1. The changes in the charge dynamics of the 2D-RP laminar perovskites compared to the similar 3D perovskites are evident.…”
Section: (E) and (F))mentioning
confidence: 99%
“…[65] In particular, as the defect centers induce trap-assisted non-radiative recombination, the trap density directly affects both the V OC and the FF. [15,[66][67][68] Hence, we assume that CsMAFA-Sb -Sb films have fewer trap sites than CsMA-Sb and CsFA-Sb. To experimentally prove our hypothesis, we evaluated the trap densities at the Sb-PIM|P3HT interface for the three devices (CsMA-Sb, CsFA-Sb, and CsMAFA-Sb) through the space-charge limited current (SCLC) method by fabricating hole-only devices with architecture "ITO/PEDOT:PSS/Sb-PIM/P3HT/MoO 3 /Au."…”
Section: Photovoltaic Performancementioning
confidence: 99%
“…That is, ESR signal enhancements in pristine and S-doped PCN were negatively and positively correlated with temperature (inset of Figure 3f). The suppressed nonradiative decay of excitons 35 might be related to the high enhancement at low temperature for pristine PCN, while the suppressed dissociation of chargetransfer exciton 36 would be responsible for the low enhancement at low temperature for S-doped PCN. It is noteworthy that the absolute intensities of the ESR signal enhancement do not represent the relative photoinduced charge-carrier concentration in the two systems, owing to their different trapping capacities related to conjugation degrees.…”
Section: ■ Results and Discussionmentioning
confidence: 99%