Poor stability and high toxicity are the primary challenges
to
the further development of Pb-based perovskite solar cells. To this
end, the scientific community has paid increased attention to lead-free
perovskites such as cesium antimony iodide (Cs3Sb2I9), which have demonstrated high stability. However,
the charge recombination that arises from deep-level defects in Cs3Sb2I9-based solar cells results in low
power conversion efficiencies (PCEs). Therefore, adding passivation
or additives such as triiodide ions (I3
–) could be viable for achieving homogeneous, compact, and defect-free
perovskite films. Herein, we develop a facile approach for eliminating
surface defects in Cs3Sb2I9 solar
cells. Light irradiation of formamidinium iodide (FAI), the generated
FA+ and I3
– ions, improves
the grain size, crystallinity, and surface morphology of the film,
thus decreasing the nonradiative defects in films. Furthermore, a
high-quality Cs3Sb2I9-based perovskite-layered
phase is achieved at a low temperature (>100 °C). With a hole-transport
layer-free architecture (glass/FTO/c-TiO2/Cs3Sb2I9/Au, where FTO = fluorine-doped tin oxide),
the PCE is boosted from 1.06 to 1.76% with good long-term stability
in an ambient environment. Additional physical characterizations evidenced
the passivation of detrimental defects, reduction of charge recombination,
and efficient charge transfer, which contribute to enhanced device
performance. We believe such a facile approach could pave the way
for the widespread development of highly stable Pb-free perovskite
solar cells.