Unconventional Carrier-Mediated Ferromagnetism above Room Temperature in Ion-Implanted (Ga, Mn)P:C

Abstract

Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at. %. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at. % value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of 1 Bohr magneton, and the spin wave stiffness inferred from the Bloch-law T(3/2) dependence of the magnetization provides an estimate T(c)=385 K of the Curie temperature that exceeds the experimental value, T(c)=270 K. The presence of ferromagnetic clusters and hysteresis to temperatures of at least 330 K is attributed to disorder and proximity to a metal-insulating transition.

Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors

“…An important issue here with the high concentration samples is the tendency of the magnetic atoms M to associate [5].…”

Resonant soft X-ray emission spectroscopy of vanadium oxides andrelated compounds

“…Ferromagnetism above room temperature in (Ga, Mn)P has been reported for two different methods of Mn incorporation, namely, ion implantation [74,75] and doping during MBE growth [76]. The implantation process is efficient for rapidly screening whether particular combinations of magnetic dopants and host semiconductors are promising in terms of ferromagnetic properties.…”

“…Also it is an important component of the AlGaInP materials system which are used for visible LEDs and high speed electronics, and is also nearly lattice matched to Si circuitry [74].…”

(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition

“…III-V based DMSs have been one of the most attracting subjects because of their low temperature ferromagnetism and the important potential applications in microelectronic and optoelectronic fields [1][2][3][4][5]. III-V based DMSs have demonstrated unique phenomena such as field-effect control of ferromagnetism [6,7], efficient spin injection to produce circularly polarized light [6,8,9], and spin-dependent resonant tunneling [4,6]. But the Curie temperature of DMSs is not high enough heretofore.…”