(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition

Abstract

The (Ga,Mn,N) samples were grown by the implantation of low-energy Mn ions into GaN/Al 2 O 3 substrate at different elevated substrate temperatures with mass-analyzed low-energy dual ion beam deposition system. Auger electron spectroscopy depth profile of samples grown at different substrate temperatures indicates that the Mn ions reach deeper in samples with higher substrate temperatures. Clear X-ray diffraction peak from (Ga,Mn)N is observed in samples grown at the higher substrate temperature. It indicates that under optimized substrate temperature and annealing conditions the solid solution (Ga,Mn)N phase in samples was formed with the same lattice structure as GaN and different lattice constant. r

Carbothermally-assisted aerosol synthesis of semiconducting materials in the system GaN/Mn

“…1). Additionally, a detailed examination of the patterns for the 10 In this regard, there seems to be no a priori structural basis to expect the formation of stable solid solutions of manganese nitride phase(s) in the h-GaN structure or vice versa. The known polytypes of manganese nitride encompass u (MnN), h (Mn 3 N 2 ), z (Mn 5 N 2 , Mn 2 N, and MnN 0.86 ), and 1(Mn 4 N) phases [14].…”

“…The coexistence of ferromagnetism and semiconducting properties in one material (magnetic semiconductors) offers an attractive area for combining the advantages of both in spintronics [2,9,10]. In this regard, the GaN/Mn system has recently become the subject of extensive research especially after it was predicted that GaN-based diluted magnetic semiconductors might have Curie temperatures exceeding room temperature [10,11].…”

“…In this regard, the GaN/Mn system has recently become the subject of extensive research especially after it was predicted that GaN-based diluted magnetic semiconductors might have Curie temperatures exceeding room temperature [10,11].…”

Effect of Growth Temperature and Mn Incorporation on GaN:Mn Thin Films Grown by Plasma-Assisted MOCVD

“…The resulted peak shifts are lower than that of GaN:Mn film grown using ion implantation method, i.e. 0.357 o for 1.5 % of Mn concentration [5]. As the growth temperature is changed to 700 o C, the single phase of GaN:Mn can be observed for GaN:Mn films with Mn concentration up to 3.2 %.…”

The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films

“…Therefore, the peak of the as-annealed sample is much weaker that of the as-grown sample. Finally, the peak of the as-annealed sample shows a little shift (0.13 • ) to the lower angle, indicating the lattice expansion of sample caused by both the substitutional and interstitial Mn atoms [7]. Fig.…”