Unclamped repetitive stress on 1200V normally-off SiC JFETs

Abbate, Carmine; Busatto, G.; Iannuzzo, Francesco

doi:10.1016/j.microrel.2012.06.097

Cited by 6 publications

(1 citation statement)

References 11 publications

(21 reference statements)

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“…Silicon carbide (SiC) material has been recognized as a prime option for increasing the power density, system switching frequency and system efficiency of power electronics due to its superior properties [1]- [3]. In recent twenty years, SiC MOSFETs have been widely applied in power electronics device with the rapid improvement of material fabrication technology [4]. However, in most applications, SiC power MOSFETs can suffer from extreme operating conditions that result in degradation, such as low channel mobility [5], poor reliability [6] and so on.…”

Section: Introductionmentioning

confidence: 99%

Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Wang

Geng

Chen

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, the degradation behavior of the electrical characteristics was investigated, and trap analysis based on low-frequency noise (LFN) was carried out for the commercial 1.2-kV/30-A silicon carbide (SiC) power MOSFETs under repetitive short-circuit (SC) stress. The experiment results show that the on-state resistance (R dson) and threshold voltage (V th) increase significantly. Meanwhile, the drain-source current (I ds) decreases obviously with the increase of the SC cycles. Furthermore, the gatesource leakage current (I gss) of the SiC power MOSFETs increase greatly and the blocking characteristics deteriorated after 1000 SC cycles. The positive shift was observed on the gate-capacitance versus gatevoltage (C g-V g) curve, which shows that the damage region could be in channel along the SiC/SiO 2 interface after repetitive SC stress. In order to obtain the trap information, trap characterization was performed by using LFN method, and the LFN results show that the trap density increases with the SC cycles. The physical mechanism could be attributed to electrically active traps generated at SiC/SiO 2 interface and oxide layer due to the peak ionization rate, the perpendicular electrical field and high temperature during SC stress. The study may be useful to provide reference for converters design and fault protection of SiC power MOSFETs. INDEX TERMS Repetitive short-circuit (SC), low-frequency noise (LFN), traps, silicon carbide (SiC) power MOSFETs.

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Section: Introductionmentioning

confidence: 99%

Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Wang

Geng

Chen

et al. 2020

IEEE J. Electron Devices Soc.

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Robustness of 1.2kV SiC MOSFET devices

Othman

Lefebvre

Berkani

et al. 2013

Microelectronics Reliability

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Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

Othman¹,

Lefebvre

Berkani

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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International audienceThis paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test

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Unclamped repetitive stress on 1200V normally-off SiC JFETs

Cited by 6 publications

References 11 publications

Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Robustness of 1.2kV SiC MOSFET devices

Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

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