Uncertainty Analysis Method Including Influence of Probe Alignment on On-Wafer Calibration Process

Sakamaki, Ryo; Horibe, Masahiro

doi:10.1109/tim.2019.2907733

Cited by 23 publications

(13 citation statements)

References 30 publications

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“…The following step is wafer probing, which is the procedure of electrically verifying each die on a wafer. This is accomplished by utilizing an automatic wafer probing system, which is actively searching for functional defects through by employing special test patterns [56][57][58]. The next step, semiconductor packaging and assembly process, involves enclosing ICs and encompasses from die-attach adhesives to liquid and film-shaped encapsulation compounds, sealing, lead forming/trimming, deflash, wirebonding, lead finish to heat-conducting materials, and conductive and non-conductive adhesives for sensors, among others.…”

Section: Semiconductor Manufacturing Processmentioning

confidence: 99%

A Review of Data Mining Applications in Semiconductor Manufacturing

Espadinha-Cruz

Godina

Rodrigues³

2021

Processes

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For decades, industrial companies have been collecting and storing high amounts of data with the aim of better controlling and managing their processes. However, this vast amount of information and hidden knowledge implicit in all of this data could be utilized more efficiently. With the help of data mining techniques unknown relationships can be systematically discovered. The production of semiconductors is a highly complex process, which entails several subprocesses that employ a diverse array of equipment. The size of the semiconductors signifies a high number of units can be produced, which require huge amounts of data in order to be able to control and improve the semiconductor manufacturing process. Therefore, in this paper a structured review is made through a sample of 137 papers of the published articles in the scientific community regarding data mining applications in semiconductor manufacturing. A detailed bibliometric analysis is also made. All data mining applications are classified in function of the application area. The results are then analyzed and conclusions are drawn.

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Section: Semiconductor Manufacturing Processmentioning

confidence: 99%

A Review of Data Mining Applications in Semiconductor Manufacturing

Espadinha-Cruz

Godina

Rodrigues³

2021

Processes

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“…A fully automatic probe station was constructed to apply the RSD technique. The details of the probe station have been published previously [22][23][24][25][26]. The measurements were conducted in two frequency bands, which ranged from 1 GHz to 110 GHz (100 GHz band) and from 220 GHz to 325 GHz (300 GHz band).…”

Section: A Measuring Instrumentsmentioning

confidence: 99%

“…Hence, it is important to readjust the probe tilt angle to minimize damage to the contact pads when the measurement position is moved far from the previous device position. Furthermore, because the thru standard has a dominant effect on calibration quality [23], the measurement of the thru standard was set to the latter process in the mTRL calibration procedure, as listed in Table II. The total processing time was approximately 2 h. Successive calibration and verification processes were repeated five times from October 2018 to March 2020.…”

Section: Precision Probe Alignment Techniquementioning

confidence: 99%

“…Although the image analysis technique can avoid the second issue, other issues cannot be avoided. Our research group developed a precision probe alignment technique that determines the probe position by analyzing the measured S-parameter [22][23][24]. This technique does not require an optical microscope image to determine the probe position in principle.…”

Section: Introductionmentioning

confidence: 99%

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Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

Sakamaki

Horibe

2021

IEEE Trans. Instrum. Meas.

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“…Unfortunately, moving the probe can cause inaccuracies in the RF calibration. This was investigated in [32] [10] and [33]. The authors from [32] recommend to plot the inductance and the phase (see Fig.…”

Section: Control Of Experimental Parametersmentioning

confidence: 99%

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

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This paper presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the onwafer calibration techniques and especially on the design and dimensions of lines built on advanced silicon technologies. Other information such as the pad geometry, the ground plane and the floorplan of the devices under test are also compared. The influence of RF probe geometry on the coupling with the substrate and adjacent structures is also considered to evaluate the accuracy of the measurement, especially using EM simulation methodology. Finally, the importance of measuring above 110 GHz is demonstrated for SiGe HBT parameter extraction. The validation of the compact model is confirmed thanks to an EM-spice cosimulation that integrates the whole calibration cum deembedding procedure.

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Uncertainty Analysis Method Including Influence of Probe Alignment on On-Wafer Calibration Process

Cited by 23 publications

References 30 publications

A Review of Data Mining Applications in Semiconductor Manufacturing

A Review of Data Mining Applications in Semiconductor Manufacturing

Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

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