Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

Kobayashi

2022

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In this study, accuracy improvements in estimations of electrical properties of millimeter-wave devices were demonstrated using the probe-backside reflection method at frequencies up to 100 GHz. The dielectric properties of silicon wafers, with nominal resistivities from 1 Ωcm to 151 kΩcm, were preliminarily evaluated using the PBR method to determine the material parameters used in the electromagnetic simulation. The S-parameter of the mmW devices fabricated on the silicon wafers was calculated using the simulation. The calculated S-parameter was well accorded with the measured S-parameter of the devices fabricated on silicon wafers. The PBR method can provide more suitable material parameters than those calculated using the Drude model for resistive wafers with resistivities greater than 3 kΩcm. However, the accuracy was degraded compared to the Drude model in the most lossy 1–100 Ωcm wafer.

Section: Experimental Methodsmentioning

confidence: 99%

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Kobayashi

2022

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“…In addition, the author developed an original measurement technique for minimizing variation in probe position to less than 1 μm. 22) Therefore, it is expected that the measurement frequency range can be increased to higher frequencies than those of others conventional resonance methods.…”

Section: Introductionmentioning

confidence: 99%

Study on measurement capability of probe-backside reflection method for evaluation of dielectric materials

2023

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This study clarifies the measurement capability of the probe-backside reflection (PBR) method for the evaluation of dielectric materials. Because the PBR method requires the preparation of a coplanar waveguide (CPW) on a material-under-test (MUT), the measurement capability is limited not only by the dielectric properties of the MUT but also by the limitations in the CPW design. In this study, the measurement capability of the PBR method was estimated to be limited up to 15 for the dielectric permittivity, and from 3 × 10-3 to 2 × 10-1 for the dielectric loss tangent, in the frequency range up to 300 GHz.

“…The PBR method requires precision control of the RF probe in the measurement process. [25][26][27][28][29][30][31] Figure 1 shows a schematic representation of the PBR method. A pair of RF probes were placed in contact with the coplanar waveguide (CPW) transmission line (TL), such that one probe was in contact with the edge while the other was in contact with the middle.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the temperature dependence of dielectric properties using probe-backside reflection method at millimeter-wave frequencies

Hirano

Horibe

2021

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In this study, we demonstrate the temperature dependence of the dielectric properties of Al 2 O 3 and Ba 2 Ti 9 O 20 ceramics, using a probe-backside reflection (PBR) method, at frequencies range up to 320 GHz. The impact of transmission loss on the dielectric properties was first eliminated from the measured S-parameter values using the original S-parameter values of a transmission line. Although the temperature coefficient of dielectric permittivity was uncertain owing to limitations in the measurement repeatability of the PBR method, those of loss tangents of Al 2 O 3 and Ba 2 Ti 9 O 20 ceramics were calculated as 2.8 × 10 −5 K −1 and 1.1 × 10 −4 K −1 , respectively, for frequencies up to 125 GHz. Furthermore, the temperature coefficient of the dielectric permittivity of Al 2 O 3 was calculated as 691 ppm K −1 at 255 GHz, while those of the dielectric loss tangent at 235 GHz and 275 GHz was calculated as 1.2 × 10 −5 K −1 and 1.5 × 10 −5 K −1 , respectively.