Evaluation of the temperature dependence of dielectric properties using probe-backside reflection method at millimeter-wave frequencies

Abstract

In this study, we demonstrate the temperature dependence of the dielectric properties of Al 2 O 3 and Ba 2 Ti 9 O 20 ceramics, using a probe-backside reflection (PBR) method, at frequencies range up to 320 GHz. The impact of transmission loss on the dielectric properties was first eliminated from the measured S-parameter values using the original S-parameter values of a transmission line. Although the temperature coefficient of dielectric permittivity was uncertain owing to limitations in the measurement repeatability of the PBR method, those of loss tangents of Al 2 O 3 and Ba 2 Ti 9 O 20 ceramics were calculated as 2.8 × 10 −5 K −1 and 1.1 × 10 −4 K −1 , respectively, for frequencies up to 125 GHz. Furthermore, the temperature coefficient of the dielectric permittivity of Al 2 O 3 was calculated as 691 ppm K −1 at 255 GHz, while those of the dielectric loss tangent at 235 GHz and 275 GHz was calculated as 1.2 × 10 −5 K −1 and 1.5 × 10 −5 K −1 , respectively.

Study on measurement capability of probe-backside reflection method for evaluation of dielectric materials

“…18) Though the S 21 trace becomes more rippling when Z c is far from the system impedance, which is 50 Ω, the impact of the rippled trace can be reduced by the compensation technique discussed in Ref. 20. Five of TLs with different Z c from 55 to 74 Ω were fabricated for the investigation.…”

“…On the other hand, the PBR method generates pseudoresonance by controlling the position of the hf probe in precision on a coplanar waveguide (CPW). [16][17][18][19][20][21] The PBR method can suppress the dimensional error of a resonator because it is determined by the accuracy of the probe position, which is generally smaller than the manufacturing error of the resonator. In addition, the author developed an original measurement technique for minimizing variation in probe position to less than 1 μm.…”

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

“…The PBR requires precise control of the RF probe position during the measurement process. [27][28][29][30][31][32][33][34] In this study, the PBR method was applied to determine the material parameters of silicon wafers for EM simulation.…”

Materials informatics for dielectric loss tangent in the millimeter wave region

“…One of the reasons is that it is still difficult to derive reliable data from the tanδ measurement in the millimeter wave region. [6][7][8][9] In addition, the first-principles calculations of tanδ require a high computational cost compared with other physical properties, such as the dielectric constant. The origin of the dielectric loss in this wavelength region can be divided into intrinsic and extrinsic origins.…”