Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure

Abstract

Ultraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical sensing, and day and nighttime surveillance. Hybrid one-dimensional (1D) and zero-dimensional (0D) materials are attractive for broadband-responsive photodetectors since its unique charges transfer characteristics and facile fabrication processes. Herein, a Si/ZnO nanowires/Ge quantum dots photodetector has been constructed via processes that combined electrospinning and spin-coating methods. A broadband response behavior from ultraviolet to near-infrared (from 250 to 1550 nm) is observed. The responsivity of the hybrid structure increases around three times from 550 to 1100 nm compared with the pure Si photodetector. Moreover, when the photodetector is illuminated by a light source exceeding 1100 nm, such as 1310 and 1550 nm, there is also a significant photoresponse. Additionally, the ZnO NWs/Ge quantum dots heterostructure is expected to be used in flexible substrates, which benefits from electrospinning and spin-coating processes. The strategy that combines 1D ZnO NWs and 0D solution-processed Ge QDs nanostructures may open a new avenue for flexible and broadband photodetector.

Fabrication, material regulation, and healthcare applications of flexible photodetectors

“…To improve the responsivity and photosensitivity of PDs based on ZnO NWs, modifications of ZnO NWs with various QDs have been proposed. 59,60 QDs can absorb more light and act as electron receptors to capture electrons under UV illumination, delay the recombination rate of carriers, and improve the conductivity and sensing performance of PDs. Shen et al fabricated a flexible PD using ZnO NWs modified by g-C 3 N 4 QDs.…”

“…To improve the responsivity and photosensitivity of PDs based on ZnO NWs, modifications of ZnO NWs with various QDs have been proposed. 59,60…”

Surface modification of ZnO nanowires using single walled carbon nanotubes for efficient UV–visible broadband photodetection

“…Hybrid structures based on CNT-ZnO composites have been researched primarily in the UV region [12][13][14] by exploiting the intrinsic attributes of CNTs that are already mentioned above and combining it with an already wellestablished [15] semiconductor material such as ZnO. ZnO based broad spectrum detectors have recently been reported by authors such as Jie et al [16] in their electro spun ZnO nanowires (NWs)/Ge quantum dots (QDs) structure with responsivity value of 172 mA W −1 over the UV-NIR range. Klochko et al [1] reported high spectral responsivity of 275 A W −1 and quantum efficiency as high as 9 × 10 4 % in their localized surface plasmon resonance mediated Ag modified ZnO film broad spectrum detector.…”

Influence of Airflow Disturbance on the Uniformity of Spin Coating Film Thickness on Large Area Rectangular Substrates

“…The spin coating method plays a significant role in the fabrication of Micro-Electro-Mechanical System (MEMS) devices [1], photodetectors [2], and diffraction optical elements [3]. Compared with the sol-gel method [4], vacuum deposition [5], dip-coating [6] and other thin film preparation methods, spin coating is more suitable for the preparation of uniform photoresist thin films due to its simple process, controllability and repeatability.…”