2022
DOI: 10.1039/d2tc02327j
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Fabrication, material regulation, and healthcare applications of flexible photodetectors

Abstract: With continuous development nanotechnology and materials science, wearable electronic devices have being one of the hot points in nanoelectronics and attracted extensive attention in the last years. The devices have...

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Cited by 5 publications
(2 citation statements)
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“…The performance of photodetectors is strongly reliant on semiconductors that respond to incident light at different wavelengths. High-performance photodetectors rely on photosensitive semiconducting layers that have (i) high charge carrier mobility, (ii) efficient light absorption over a wide spectral range, (iii) high photo-to-dark current ratio, (iv) negligible charge trapping, (v) long-term operational stability, and (vi) low-cost scalability. With the emergence of wearable and surface-conforming electronics, mechanical flexibility is added to these critical factors . Commercial photodetectors use inorganic semiconductors such as gallium nitride (GaN), Si, and indium gallium arsenide (InGaAs) as the photosensitive layer, requiring sophisticated physical or chemical vapor deposition (CVD) techniques that translate to high fabrication costs. These photodetectors also have a limited photosensitive spectral region, restrictively low operating temperatures (liquid nitrogen/helium temperature), and a reliance on amplifiers to enhance detectivity. , The most critical disadvantages are high brittleness and heavy weight, which reduce flexibility and portability, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…The performance of photodetectors is strongly reliant on semiconductors that respond to incident light at different wavelengths. High-performance photodetectors rely on photosensitive semiconducting layers that have (i) high charge carrier mobility, (ii) efficient light absorption over a wide spectral range, (iii) high photo-to-dark current ratio, (iv) negligible charge trapping, (v) long-term operational stability, and (vi) low-cost scalability. With the emergence of wearable and surface-conforming electronics, mechanical flexibility is added to these critical factors . Commercial photodetectors use inorganic semiconductors such as gallium nitride (GaN), Si, and indium gallium arsenide (InGaAs) as the photosensitive layer, requiring sophisticated physical or chemical vapor deposition (CVD) techniques that translate to high fabrication costs. These photodetectors also have a limited photosensitive spectral region, restrictively low operating temperatures (liquid nitrogen/helium temperature), and a reliance on amplifiers to enhance detectivity. , The most critical disadvantages are high brittleness and heavy weight, which reduce flexibility and portability, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Flexible UV-visible-near-infrared (NIR) broadband photodetectors (flexible UV-visible-NIR PDs) are considered one of the essential components for wearable electronic devices due to their benefits of high flexibility, mechanical robustness, and stable detection properties. [1][2][3][4] The integration of wide photodetection in wearable electronics has the potential to expand their functionality and usefulness significantly, making them essential tools in a variety of settings such as healthcare, environmental, security, non-visual sensing, augmented reality, and virtual reality applications. [2,[4][5][6] Recently, lead-free inorganic perovskites have been reported as potential photosensitive layers for flexible PDs owing to their structural stability in the air, tunable optoelectronic properties, and the feasibility of low-temperature solution processing of high crystalline materials.…”
Section: Introductionmentioning
confidence: 99%