Ultraviolet (UV) raman characterization of ultra- shallow ion implanted silicon

Ultra-Thin SiO2/Si Interface Quality In-Line Monitoring Using Multiwavelength Room Temperature Photoluminescence and Raman Spectroscopy

“…Details of design concepts and Si and dielectric/Si characterization application examples of the multiwavelength RTPL system used in this study can be found in previous publications. [7][8][9][10] To gain insights into electronic carrier behavioral properties as an SiO 2 /Si interface (passivation) quality factor, RTPL intensity and spectra mapping of the two sets of SiO 2 /Si wafers was done under 532, 650 and 827 nm excitation. Figure 1a and 1b show RTPL spectra measured from the center of the first set of SiO 2 /Si wafers under 650 and 827 nm excitation.…”

“…A WaferMasters' MPL-300 system was used, with three excitation wavelengths (532, 650 and 827 nm) which have different penetration depths (∼1.5, ∼4.0 and ∼10 μm). [7][8][9][10] Penetration depth is a measure of how deep excitation light can penetrate into Si. It is defined as the depth at which the intensity of the excitation light inside the material falls to 1/e (about 37%) of its original value as it propagates into the SiO 2 /Si interface.…”

“…Side effects of non-contact electrical measurements.-To investigate the effect of Corona charge-based non-contact electrical measurements, RTPL spectra were measured after the routine (in-line and non-contact) electrical metrology, under three excitation wavelengths in the wavelength range of 900 nm ∼ 1400 nm (532, 650 and 827 nm) which have different penetration depths (∼1.5, ∼4.0 and ∼10 μm). [7][8][9][10][11][12] For detailed wafer mapping, 15,101 points per wafer for each excitation wavelength were measured in 2 mm intervals in both x-and y-directions. Fine pitch x-and y-line scans across the wafer were also done at 559 points, at 500 μm intervals.…”

“…The details of the system and its applications have been published elsewhere. [7][8][9][10] No measurable RTPL signal was observed from most of SiO 2 /Si wafers under 532 nm excitation. For 650 nm excitation, the laser power at the wafer surface was 20 mW and exposure time was 1.0 s per point.…”

Room Temperature Photoluminescence and Ultraviolet Raman Characterization of Boron Implanted Silicon under Various Laser Annealing Conditions

“…5 Room temperature PL (RTPL) studies on ultrashallow and shallow implanted Si with high doses ( 1.0 × 10 15 cm −2 ), have been reported with other characterization results with Raman spectroscopy, sheet resistance measurements and secondary ion mass spectroscopy (SIMS) data. [6][7][8][9][10] For ultra-shallow and shallow implanted junction characterization, UV Raman spectroscopy with shallow probing depths (<50 nm) is very effective. 8,[11][12][13] In complementary metal-oxide-semiconductor (CMOS) image sensor fabrication processing, low-energy (up to few keV) and low dose (up to 5.0 × 10 14 cm −2 ) B + -implantation and laser annealing are frequently used.…”