Ultraviolet photodetector based on single GaN nanorod p–n junctions

Son, Min; Im, Seongil; Park, Y.S.; Park, C.M.; Kang, Tae Won; Yoo, Keunje

doi:10.1016/j.msec.2005.09.089

Cited by 33 publications

(19 citation statements)

References 9 publications

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“…Wurtzite GaN having desirable properties like large direct band gap of 3.4 eV at room temperature, thermal stability and good resistant to radiation, is a significantly important material which finds applications in light emitting diodes and laser diodes. p-type doping of GaN can improve the performances of such nano-electronic and optoelectronic devices [4,5]. Therefore, addressing the real problems in making p-type and n-type GaN homojunction nanorods invites curious attention as they are found functionally important in above mentioned optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Ryu

Ram

Lee

et al. 2015

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Ryu

Ram

Lee

et al. 2015

Applied Surface Science

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“…Recently ZnO nanocolumns have also been successfully grown by a variety of techniques, like thermal evaporation [6] and MOCVD [7,8]. Nanocolumnar test devices have also been demonstrated, like nanocolumnar p-n light emitting diodes (LEDs), grown by hydride vapour phase epitaxy (HVPE) [9] and MBE [10], or ultraviolet (UV) photodetectors [11].…”

Section: Introductionmentioning

confidence: 99%

Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks

Calleja¹,

Ristić

Fernández-Garrido

et al. 2007

Physica Status Solidi (b)

155

157

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The growth conditions to achieve group-III-nitride nanocolumns and nanocolumnar heterostructures by plasma-assisted molecular beam epitaxy are studied. The evolution of the nanocolumnar morphology with the growth conditions is determined for (Ga,Al)N and (In,Ga)N nanocolumns. The mechanisms behind the nanocolumnar growth under high N-rich conditions are clarified in the sense that no seeding or catalysts are required, as it is the case in the vapour-liquid-solid model that applies to most nanocolumns grown by metal organic chemical vapour deposition, either with group-III nitrides, II -VI or III -V compounds. Some examples of nanocolumnar heterostructures are given, like quantum disks and cylindrical nanocavities. Preliminary results on the growth of arrays of ordered GaN nanocolumns are reported.

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“…Zhai et al [174] pursued a similar thermal evaporation method but with Au nanoparticle catalyst. Others include InP NW PDs [136], NWs of CdTe [175], ultraviolet PDs based on single GaN nanorod p-n junctions [176], InAs/InAsP NWs [177], aligned assemblies of core-shell CdSe/CdS nanorods [178], Ge NW with CdS nanoparticle heterojunction [179], single InP NW devices with back-to-back Schottky barriers [180], Se NWs [181], Ge NW PDs [182], [183], InSb-NW-array PDs [184], CdZnS NW networks [185], metal-semiconductor-metal PDs made from an individual CdS NW [186], Ge NW Schottky PDs [79], [187], Bi 2 S 3 NWs [188], 3-D-to-3-D-transferred Si photoconductor [135], and InP NWs [189].…”

Section: A Review Of Various Nw Pds 1) Nw Pds Via Direct Growthmentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

140

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Abstract-One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices. The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges. In particular, we present an ultrafast surface-illuminated PD with 11.4-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible massmanufacturable device fabrication. Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application.

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Ultraviolet photodetector based on single GaN nanorod p–n junctions

Cited by 33 publications

References 9 publications

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

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