Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks

Calleja, E.; Ristić, Jelena; Fernández-Garrido, Sergio; Cerutti, L.; Sánchez-García, M.Á.; Grandal, J.; Trampert, A.; Jahn, U.; Sànchez, G.; Griol, Amadeu; Sanchez, Benito

doi:10.1002/pssb.200675628

Cited by 155 publications

(171 citation statements)

References 56 publications

(71 reference statements)

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“…NWs growth was completely inhibited at a relatively low V/III ratio of *27 evidenced by the growth of InAs clusters (islands). This is consistent with previous reports (Caroff et al 2009;Dayeh et al 2009) and can be understood owing to the fact that group V-rich conditions are required for the nucleation and growth of NWs (Calleja et al 2007). It is well established that the axial growth of self-catalyzed NWs is highly dependent on the group V flux Ramdani et al 2013;Somaschini et al 2013;Anyebe et al 2014;Ermez et al 2015;Hwang et al 2015).…”

Section: Influence Of V/iii Flux Ratiosupporting

confidence: 92%

Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon

Anyebe

2017

Appl Nanosci

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The influence of growth parameters on the morphology and density of InAs nanowires (NWs) grown on bare Si substrates using Indium (In) droplets as catalyst is investigated. By tuning the growth temperature, V/III flux ratio, and growth rate, the diameter and yield of asgrown NWs were controllably manipulated. It is demonstrated that the In-droplet-assisted growth of InAs NWs can only be realized on bare Si within a relatively narrow growth window of 420-475°C. Below 420°C, NWs' growth is kinetically limited, while the highest yield of vertically aligned NWs was obtained at *450°C. It is shown that In-catalyzed InAs NWs nucleation can only be realized on Si at highly As-rich conditions (V/III flux ratio [50), while the axial growth rate was found to be strongly dependent on the V/III flux ratio. The nucleation and axial growth of In-catalyzed InAs NWs are promoted by a low growth rate, while a high growth rate favors the formation of unwanted parasitic islands.

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Section: Influence Of V/iii Flux Ratiosupporting

confidence: 92%

Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon

Anyebe

2017

Appl Nanosci

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“…36, where the schematic structure and actual nanocolumnar cavities with GaN QDiscs are shown. 141 The active cavity and DBRs were clearly resolved in the TEM images. …”

Section: B Gan Nanorods In Combination With Photonic Crystal Effect mentioning

confidence: 96%

“…78 The nanostructures reported by Bertness et al 77 were single nanorods for openings approximately 500 nm in diameter or less. Coalesced nanostructures with rough, faceted tops were observed to appear in the growth with large openings.…”

Section: -9mentioning

confidence: 99%

“…139,140 GaN nanorods can also be combined with Bragg reflectors to enhance the extraction efficiency by using bottom Bragg reflectors either as a continuous 2 D multilayer from where nanorods grow, or by being placed within each nanoLED structure while growing it. 141 The strain which often induces cracks in the planar AlGaN (AlN)/GaN Bragg reflectors is not a subject in III-nitride Bragg reflector growth within GaN nanorods because they essentially grow strainfree from the substrate. Another advantage of the nanorod approach is that growth of the light emitters is not limited to lattice matched bottom Bragg mirrors.…”

Section: B Gan Nanorods In Combination With Photonic Crystal Effect mentioning

confidence: 99%

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GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

488

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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“…For InN:Si nanowires, the Si cell temperatures were ∼ 1250 • C and ∼ 1350 • C, respectively. Compared to the previous approaches in growing InN nanowires, 8,21,32,36,[47][48][49][50][51] in this experiment an In seeding layer (∼ 0.6 nm) was first deposited in situ onto Si (111) surface prior to the growth initiation, which can promote the formation and nucleation of InN nanowires. The detailed growth procedures were described elsewhere.…”

Section: Experimental Setupsmentioning

confidence: 99%

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

Zhao

Kibria

et al. 2012

Phys. Rev. B

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In the present work, photoluminescence characteristics of intrinsic and Si-doped InN nanowires were studied in details. For intrinsic InN nanowires, the emission is due to band-to-band carrier recombination with the peak energy at ∼ 0.64 eV (at 300 K), and may involve free-exciton emission at low temperatures. The PL spectra exhibit a strong dependence on optical excitation power and temperature, which can be well characterized by the presence of very low residual electron density, and the absence or negligible level of surface electron accumulation. In comparison, the emission of Si-doped InN nanowires is characterized by the presence of two distinct peaks located at ∼ 0.65 eV and ∼ 0.73 − 0.75 eV (at 300 K). Detailed studies further suggest that these low-energy and highenergy peaks can be ascribed to band-to-band carrier recombination in the relatively low-doped nanowire bulk region and Mahan exciton emission in the high-doped nanowire near-surface region, respectively; this is a natural consequence of dopants surface segregation. The resulting surface electron accumulation and Fermi-level pinning, due to the enhanced surface doping, is confirmed by angle-resolved X-ray photoelectron spectroscopy measurements on Si-doped InN nanowires, which is in direct contrast to the absence, or negligible level of surface electron accumulation in intrinsic InN nanowires. This work has elucidated the role of charge carrier concentration and distribution on the optical properties of InN nanowires.

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Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks

Cited by 155 publications

References 56 publications

Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon

Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon

GaN based nanorods for solid state lighting

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

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