In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.
Vertically aligned GaN nanorods have recently obtained substantial interest as a new approach to solid state lighting. In comparison to conventional planar LEDs, 3D NanoLEDs are expected to offer substantial advantageous: very low defect density, quasi free‐standing, no strain due to mismatch of thermal expansion coefficients, no substrate bending even when grown on large area silicon. Core‐shell strategies are another very interesting aspect. The active LED surface per wafer could be increased by more than one order of magnitude. However, most of these advantages have not yet been proven in real devices, which would include a quantitative comparison of light emission. Related to the 3D character, there are also technological risks. In the following we will discuss the main developments which have paved the way up to this point, including a detailed discussion of possible benefits and risks connected with the NanoLED approach (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Arrays of dislocation free uniform Ga-polar GaN columns have been realized on patterned SiO x /GaN/sapphire templates by metal organic vapor phase epitaxy using a continuous growth mode. The key parameters and the physical principles of growth of Ga-polar GaN three-dimensional columns are identified, and their potential for manipulating the growth process is discussed. High aspect ratio columns have been achieved using silane during the growth, leading to n-type columns. The vertical growth rate increases with increasing silane flow. In a core–shell columnar LED structure, the shells of InGaN/GaN multi quantum wells and p-GaN have been realized on a core of n-doped GaN column. Cathodoluminescence gives insight into the inner structure of these core–shell LED structures.
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