Ultraviolet dosimetry using thermoluminescence of semiconductor-doped Vycor glass

Justus, B. L.; Huston, Alan L.

doi:10.1063/1.114999

Cited by 12 publications

(4 citation statements)

References 8 publications

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“…In fact, radiation‐induced luminescence phenomena related to the Cu + in Cu‐doped glasses have been widely investigated. However, many of these studies have focused on the thermoluminescence, optically stimulated luminescence, lyo—and mechano‐luminescence phenomena, or scintillation properties . Investigations of the RPL phenomena of Cu are very limited .…”

Section: Introductionmentioning

confidence: 99%

Radiophotoluminescence phenomenon in copper‐doped aluminoborosilicate glass

et al. 2018

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Radiophotoluminescence phenomena have been widely investigated on various types of materials for dosimetry applications. We report that an aluminoborosilicate glass containing 0.005 mol% copper exhibits intense photoluminescence in the visible region induced by X‐ray and γ‐ray irradiation. The luminescence is assigned to the 3d94s1 → 3d10 transition of Cu+. The proportionality of the intensity of the induced photoluminescence to the irradiation dose was confirmed up to 0.5 kGy using 60Co γ‐ray irradiation. Based on the spectroscopic results, a potential mechanism was proposed for the enhancement of the photoluminescence. The exposure to the ionizing radiation generates electron‐hole pairs in the glass, and the electrons are subsequently captured by the Cu2+ ions, which are converted to Cu+ and emit the luminescence. For the glass containing 0.01 mol% copper, the pronounced enhancement of the photoluminescence was not observed because the reverse reaction, ie, the capture of the holes by the Cu+ ions, becomes prominent. The photoluminescence induced by the irradiation was stably observed for the glasses kept at room temperature and even for the glasses heat‐treated at 150°C. However, the induced photoluminescence could be eliminated by the heat treatment at a temperature at 500°C, and the glass returned to the initial pre‐irradiation state. The Cu‐doped aluminoborosilicate glass is a potential candidate for use in dosimetry applications.

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Section: Introductionmentioning

confidence: 99%

Radiophotoluminescence phenomenon in copper‐doped aluminoborosilicate glass

et al. 2018

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“…Several thermoluminescent (TL) materials have been investigated as possible UV dosimeters. These have included LiF:Mg, CaF 2 :Dy, CaF 2 :Mn, Al 2 O 3 , LiF:Mg, CaSO 4 :Dy [68], CaF 2 :TB 4 O 7 [69], and semiconductor-doped Vycor glass [70]. TL materials have never found established roles as UV dosimeters.…”

Section: Thermoluminescent Materialsmentioning

confidence: 99%

The Early Days of Personal Solar Ultraviolet Dosimetry

Diffey

2020

Atmosphere

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In the early 1970s, environmental conservationists were becoming concerned that a reduction in the thickness of the atmospheric ozone layer would lead to increased levels of ultraviolet (UV) radiation at ground level, resulting in higher population exposure to UV and subsequent harm, especially a rise in skin cancer. At the time, no measurements had been reported on the normal levels of solar UV radiation which populations received in their usual environment, so this lack of data, coupled with increasing concerns about the impact to human health, led to the development of simple devices that monitored personal UV exposure. The first and most widely used UV dosimeter was the polymer film, polysulphone, and this review describes its properties and some of the pioneering studies using the dosimeter that led to a quantitative understanding of human exposure to sunlight in a variety of behavioral, occupational, and geographical settings.

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“…In measuring devices [102,[148][149][150][151][152][153][154][155][156][157][158][159][160][161] a variety of photodetector types are utilized: S-II photoemission tube [148,149], thermoluminescent detectors in CaF 2 :Tb [150] or GaAsP [102] and GaP surface-barrier structures [151]. The UV radiation intensity is determined from the photocurrent induced in the detector.…”

Section: Measuring Devicesmentioning

confidence: 99%

Semiconductor near-ultraviolet photoelectronics

Goldberg

1999

Semicond. Sci. Technol.

121

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After a brief review of classification, application and sources of near-ultraviolet (UV) radiation the methods for fabricating UV photodetectors and characteristics of the photoconductive cells, p-n junction structure and Schottky barrier photodiodes are discussed. Characteristics of some light filters used in photodetectors and measuring devices are also reported. Now Si p-n structures are commonly used but Schottky diodes based on wide-gap (GaAsP, GaP, GaN, AlGaN, SiC) semiconductors are very attractive. They are insensitive to the infrared radiation and if necessary simple glass filters can be used for correcting the spectrum in such way that it covers just the near-UV region.

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Ultraviolet dosimetry using thermoluminescence of semiconductor-doped Vycor glass

Cited by 12 publications

References 8 publications

Radiophotoluminescence phenomenon in copper‐doped aluminoborosilicate glass

Radiophotoluminescence phenomenon in copper‐doped aluminoborosilicate glass

The Early Days of Personal Solar Ultraviolet Dosimetry

Semiconductor near-ultraviolet photoelectronics

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