Semiconductor near-ultraviolet photoelectronics

Goldberg, Yu. A.

doi:10.1088/0268-1242/14/7/201

Cited by 121 publications

(66 citation statements)

References 117 publications

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“…The ultra-fast , where τ dif , τ dr and τ c are carrier diffusion time from generated area to junction region, drift time in the junction region, and parasitic circuit time constant, respectively. 56 Due to atomic layer thickness and high mobility of graphene, the diffusion time in graphene τ dif (Gr) is estimated to be less than 1 ps. As the UV light penetration depth l is much less than the depletion region width W, τ dif (Si) in Si substrate for UV light can also be neglected according to τ dif = d 2 /(2D c ) and d~0, where d is the diffusion length and D c is the diffusion coefficient.…”

Section: Resultsmentioning

confidence: 99%

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

et al. 2017

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We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W −1 ), fast time response (5 ns), high specific detectivity (1.6 × 10 13 Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W −1 in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and "dissipation-less" remote sensor networks.

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Section: Resultsmentioning

confidence: 99%

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

et al. 2017

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“…The Sun radiates over the entire ultraviolet (UV) spectrum, however, ozone in the Earth's atmosphere strongly absorbs wavelengths between 200 nm and 300 nm [1,2]. Solar-blind UV detectors are sensitive only to wavelengths in the UV-C region (200 nm to 280 nm) and therefore only respond to terrestrial sources radiating in this region [3].…”

Section: Introductionmentioning

confidence: 99%

“…UV research began in the latter half of the 19th century and the development of electro-optic systems for studying objects emitting in the UV region (10 nm to 400 nm) was stimulated after World War II, because of their military, industrial and scientific applications [1,2,4]. These systems and their components need to be robust, withstand UV radiation, and have good signalto-noise ratios (S/N).…”

Section: Introductionmentioning

confidence: 99%

Implementation of an AlGaN-based solar-blind UV four-quadrant detector

Schalkwyk

Meyer

Nel

et al. 2014

Physica B: Condensed Matter

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An AlGaN-based front illuminated intrinsically solar-blind ultraviolet four-quadrant Schottky detector was fabricated and characterized. A layered ohmic structure was deposited followed by a multi-step annealing method. Ultraviolet transmissive iridium oxide was used as the Schottky barrier material and formed by a two-step annealing method. Au contacts were deposited on the Schottky contacts and annealed. The detector was mounted onto a commercial chip carrier and wires were epoxy bonded from the ohmic and Au contacts to the carrier strips. The detector had an average ideality factor of 1.97 ± 0.08, a Schottky barrier height of (1.22 ± 0.07) eV, a reverse leakage current density of (2.1 ± 4) nA/cm 2 , a series resistance of (120 ± 30) Ω and a free carrier concentration of (1.6 ± 0.3) × 10 18 cm −3 . Spectral characterization on the photosensitive area of 7.3 × 10 −3 cm 2 yielded a cut-off wavelength at (275 ± 5) nm (4.59 eV to 4.23 eV) for each quadrant, corresponding to the absorption edge of a (46 ± 3)% Al content AlGaN-based material. The detector had an average responsivity of (28 ± 2) mA/W and quantum efficiency of (14 ± 1)% at 250 nm. The ultraviolet-to-visible and near-infrared rejection ratio was between 10 3 and 10 5 for most of the quadrants. Characterization showed uniformity across the quadrants, proving the detector feasible for implementation in future ultraviolet-sensitive electro-optic devices.

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“…These include absorption and emission spectrometers, flame detectors, surface defect detectors, satellite cameras, surveillance cameras and so on [1,2,3,4,5,6,7,8,9,10,11,12,13,14]. These instruments are used in a variety of scientific and engineering fields: chemical, life scientific and medical analyses, material science and semiconductor manufacturing, factory automation, environmental assessment and space vision [1,2,3,4,5,6,7,8,9,10,11,12,13,14]. Image sensors used in these fields are required to have high sensitivity through 200 to 1000 nm or selected waveband of these.…”

Section: Introductionmentioning

confidence: 99%

Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

Kuroda

Sugawa

2014

IEICE Electron. Express

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Si image sensors with a wide spectral response range and a high robustness to ultraviolet light exposure based on flattened Si surface are described in this paper. A photodiode (PD) fabrication technology is developed to form a thin surface high concentration layer with steep dopant profile on flattened Si surface. Due to this, PDs with a wide spectral response ranging from 200 to 1000 nm is achieved with almost 100% internal quantum efficiency to ultraviolet light (UV-light) waveband. In addition, high robustness of light sensitivity and dark current toward UV-light exposure is obtained. The developed technology is applied to in-pixel buried PDs of photodiode arrays and a CMOS image sensor. The advanced performances of fabricated sensors are verified with experimental results.

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Semiconductor near-ultraviolet photoelectronics

Cited by 121 publications

References 117 publications

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

Implementation of an AlGaN-based solar-blind UV four-quadrant detector

Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

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