Ultrathin μc-Si films deposited by PECVD

Rizzoli, R.; Summonte, C.; Plá, Juan Carlos; Centurioni, E.; Ruani, G.; Desalvo, A.; Zignani, F.

doi:10.1016/s0040-6090(00)01595-9

Cited by 13 publications

(6 citation statements)

References 5 publications

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“…Conversely, amorphous silicon shows a single wide maximum in this part of the spectrum. The two R peaks can be used to identify and quantify the crystalline silicon phase in microcrystalline silicon films [12]. After 1250 °C annealing MS and PECVD samples indeed show two R peak that are not present al lower annealing temperature.…”

Section: Uv-reflectancementioning

confidence: 98%

Optical properties of silicon rich oxides

Summonte

Centurioni

Canino

et al. 2011

Phys. Status Solidi (c)

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Section: Uv-reflectancementioning

confidence: 98%

Optical properties of silicon rich oxides

Summonte

Centurioni

Canino

et al. 2011

Phys. Status Solidi (c)

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“…In the fourth column, only the signal intensities at 480 cm Ϫ1 and 520 cm Ϫ1 are taken for the amorphous and the crystalline fraction respectively; a method used, for example, in Ref. 6. In the following column, the result from fitting three Gaussian line profiles is shown ͑fitting procedure is copied from Ref.…”

Section: Comparison With Other Techniquesmentioning

confidence: 99%

Determining the material structure of microcrystalline silicon from Raman spectra

Smit

Swaaij

Donker

et al. 2003

Journal of Applied Physics

343

174

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An easy and reliable method to extract the crystalline fractions in microcrystalline films is proposed. The method is shown to overcome, in a natural way, the inconsistencies that arise from the regular peak fitting routines. We subtract a scaled Raman spectrum that was obtained from an amorphous silicon film from the Raman spectrum of the microcrystalline silicon film. This subtraction leaves us with the Raman spectrum of the crystalline part of the microcrystalline film and the crystalline fraction can be determined. We apply this method to a series of samples covering the transition regime from amorphous to microcrystalline silicon. The crystalline fractions show good agreement with x-ray diffraction (XRD) results, in contrast to crystalline fractions obtained by the fitting of Gaussian line profiles applied to the same Raman spectra. The spectral line shape of the crystalline contribution to the Raman spectrum shows a clear asymmetry, an observation in agreement with model calculations reported previously. The varying width of this asymmetrical peak is shown to correlate with the mean crystallite size as determined from XRD spectra.

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“…The ratio y varies with the excitation wavelength and with the grain size [5] and a value of 0.8 was adopted [4]. Second, even more simple method used in our laboratory and for example in [6,7], is the crystallinity determination from the amplitudes of crystalline and amorphous bands. The crystallinity is calculated as…”

Section: Introductionmentioning

confidence: 99%