Abstract:To achieve power generation on IC chips, a hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction solar cell was designed and fabricated on silicon-on-insulator substrate, where a 9-µm epitaxial p-type c-Si layer served as light absorption layer and the buried SiO 2 as back surface passivation layer. It was found that a 1-µm heavily doped thin p + layer was vital for improving the cell performances. Efficiency up to 12.7% with an open-circuit voltage of 679.7 mV was achieved on a 1.0… Show more
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