Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN

Zhuang, Zhe; Iida, Daisuke; Ohkawa, Kazuhiro

doi:10.1364/prj.439741

Cited by 24 publications

(17 citation statements)

References 39 publications

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“…4(b). 16,18,20,21,23,26,33,[37][38][39][40][41] We also calculated the EQEs and WPEs of the LEDs at various injection currents, as shown in Fig. 5.…”

Section: (B) the Fwhm Emission Of The Leds Is Comparable To State-of-...mentioning

confidence: 99%

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

et al. 2022

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Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibited high-purity emission with a narrow full-width at half-maximum of 51 nm. The packaged LED’s external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays.

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“…4(b). 16,18,20,21,23,26,33,[37][38][39][40][41] We also calculated the EQEs and WPEs of the LEDs at various injection currents, as shown in Fig. 5.…”

Section: (B) the Fwhm Emission Of The Leds Is Comparable To State-of-...mentioning

confidence: 99%

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

et al. 2022

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“…The surface recombination velocity of AlGaInP is greater than that of GaN [75]. AlGaInP red (peak wavelength (λp)≈ 632 nm) micro-LEDs with a size of 20 × 20 µm 2 exhibit a LOP density of 175 mW cm −2 [2]; the LOP density of InGaN-based red micro-LEDs has increased from 40 to 176 to 936 mW cm −2 in recent years [76][77][78]. After just one year, the LOP density of InGaN red micro-LEDs was five-fold that of AlGaInP red micro-LEDs.…”

Section: Statusmentioning

confidence: 99%

The micro-LED roadmap: status quo and prospects

Lin,

Wu,

Kuo

et al. 2023

J. Phys. Photonics

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Micro LED can play an important role in the future generation of smart displays. They are found very attractive in many applications, such as maskless lithography, biosensor, AR/MR etc., at the same time. A monitor that can fulfill saturated color rendering, high display resolution, and fast response time is highly desirable, and the micro LED-based technology could be our best chance to meet these requirements. At present, semiconductor-based RGB micro LED chips and color-conversion enhanced Micro LEDs are the major contenders for the full-color high resolution displays. Both of the methods need revolutionary ways to perfect the material qualities, fabricate the device, assemble the individual parts into a system. In this roadmap, we will highlight the current status and challenges of the micro LED-related issues, and discuss the possible advances in science and technology that can stand up to the challenges. The innovation in epitaxy, such as the tunnel junction, the direct epitaxy and nitride based quantum wells for red and ultraviolet, can provide critical solutions of the micro LED performance in various aspects. The quantum scale structure like nanowire or nanorod can be crucial for the scaling of the devices. Meanwhile, the color conversion method, which uses colloidal quantum dots as the active material, can provide a hassle-free way to assemble a large micro LED array, and emphasis on the full color demonstration via colloidal quantum dots. These quantum dots can be patterned by porous structure, inkjet or photo-sensitive resin. In addition to the micro LED devices, the peripheral components or technologies are equally important. Microchip transfer and repair, heterogeneous integration with the electronics and the novel 2D material cannot be ignored or the overall display module will be very power-consuming. The augmented reality is one of the potential customer for our micro-LED displays and the user experience so far is limited due to lack of the truly qualified display. Our analysis showed the micro LED is on the way to address and solve the current problems, such as high loss optical coupling and narrow field of view. All these efforts are channeled to achieve an efficient display with all ideal qualities that meet our most stringent viewing requirements and expect it to become an indispensable part of our daily life.

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“…[44,45] Moreover, GaN-based LED has the characteristics of environmental protection, low power consumption, long life, and low operating voltage, so it is widely used in the research of light-emitting and display devices. [46][47][48][49] The production process is generally an epitaxial InGaN/GaN wafer grown on a substrate by metal organic chemical vapor deposition (MOCVD), combined with inductively coupled plasma dry etching and other technologies to carry out the chip manufacturing process. At present, although GaN-based chips have problems such as device yield, wavelength uniformity, substrate selection, etc.…”

Section: The Challenges Of Micro-ledmentioning

confidence: 99%

Progress in Color Conversion Technology for Micro‐LED

Chen

et al. 2022

Adv Materials Technologies

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LCD (TFT-LCD) improved this problem. [3] As a display technology that is lightweight and not inferior to CRT, it quickly replaced CRT and became one of the most mainstream displays on the market at that time. The characteristics of LCD still have the disadvantage of limited contrast and poor flexibility. In recent years, the most mature and comprehensive display technology in the market is organic light-emitting diode (OLED). [4] Compared with LCD, its self-luminous ability, transparency, true dark tone, and manufacturing flexibility are one of the highlights of OLED, and it has been widely used in the market. [5,6] The disadvantage is that it is technically difficult to make materials and control color stability, and at the same time, it has high cost, low yield, short lifespan, and

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Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN

Cited by 24 publications

References 39 publications

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

The micro-LED roadmap: status quo and prospects

Progress in Color Conversion Technology for Micro‐LED

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