Here we report InGaN-based red light-emitting diodes (LEDs) grown on (
2
¯
01
) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.
Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibited high-purity emission with a narrow full-width at half-maximum of 51 nm. The packaged LED’s external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays.
Here, we proposed fabricating ultra-small InGaN-based micro-light-emitting diodes (µLEDs). The selective p-GaN areas were intentionally passivated using a
H
2
plasma treatment and served as the electrical isolation regions to prevent the current from injecting into the InGaN quantum wells below. Three kinds of green µLEDs, two squircle shapes with widths of 5 and 4 µm and one circular shape with a diameter of 2.7 µm, were successfully realized. The current-voltage characteristics indicate that the series resistance and the turn-on voltage increase as the dimension of the µLED decreases. This originates from the diffusion of the hydrogen atoms into the unexpected conductive p-GaN area. The light output power density and the calculated external quantum efficiency of the µLEDs from a 5-µm-squircle to a 2.7-µm-circle were enhanced by 10−20% when compared to
98
×
98
µ
m
2
µLEDs that were fabricated using mesa etching.
We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO4(0001) (SAM) substrate without a low-temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In0.13Ga0.87N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O-Sc SAM surface and the (Ga,In) atoms of InGaN.
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