2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers 2014
DOI: 10.1109/vlsit.2014.6894413
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Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era

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Cited by 12 publications
(6 citation statements)
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“…Beside this result on FPGA, these designs are synthesized on 65 nm SOTB technology. Silicon-On-Thin-Buried-Oxide (SOTB) CMOS is a SOI device for low power electronics due to its back-bias control and small variability [13]. The comparison between ACor_16, ACor_8, and ACor_4 on 65 nm SOTB technology, synthesized results after Placement and Routing step, are shown in Tab.…”
Section: Resultsmentioning
confidence: 99%
“…Beside this result on FPGA, these designs are synthesized on 65 nm SOTB technology. Silicon-On-Thin-Buried-Oxide (SOTB) CMOS is a SOI device for low power electronics due to its back-bias control and small variability [13]. The comparison between ACor_16, ACor_8, and ACor_4 on 65 nm SOTB technology, synthesized results after Placement and Routing step, are shown in Tab.…”
Section: Resultsmentioning
confidence: 99%
“…The proposed voltage converter is fabricated in the 65 nm SOTB process [10]. Note that the proposed circuit techniques are not limited to the SOTB process and are effective for standard CMOS process technologies in which ultra-low or zero VTH transistor is available.…”
Section: Measurement Resultsmentioning
confidence: 99%
“…In fact, several groups are actively pursuing implementations at larger dimensions. A low-cost implementation at 65 nm has been already demonstrated and is ready for foundry offering [78]. One can imagine a process shrink of this technology to 55 nm or 45/40 nm to further reduce the die cost.…”
Section: Fdsoi Scalability and Global Landscapementioning
confidence: 99%