Ultralow threshold blue quantum dot lasers: what’s the true recipe for success?

Raun, Alexander; Hu, Evelyn L.

doi:10.1515/nanoph-2020-0382

Cited by 6 publications

(5 citation statements)

References 37 publications

(42 reference statements)

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“…GaN microcavities denote the optical dimensional confined GaN micro structures exhibiting singular performances or producing exotic effects, such as low‐threshold lasing, enhanced nonlinear conversion, and directional luminescence. During the past few years, numerous geometries of GaN‐based micro cavities have been investigated, including 1D photonic crystal cavities, [ 101–104 ] nanowire cavities, [ 105–109 ] nanowire waveguides, [ 110–114 ] micro disks, [ 6,115–144 ] etc. These cavities support single mode or multiple modes to realize strong light–matter coupling.…”

Section: Gan‐based Micro Cavitymentioning

confidence: 99%

“…In 2021, Raun et al. proposed the hybridization QWs and QDs structured GaN micro‐structures, [ 134 ] where the gain material was a hybridization of InGaN QDs and fragmented QWs (FQWs). The WGMs was designed to overlap the FWQ spectral region as well as the QD spectral region, while lasing ultimately occurred at the QD region.…”

Section: Gan‐based Micro Cavitymentioning

confidence: 99%

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Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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Section: Gan‐based Micro Cavitymentioning

confidence: 99%

Section: Gan‐based Micro Cavitymentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

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“…Photonic integrated circuits with lower power consumption may alleviate the heat dissipation problem in computers. Microdisk lasers are promising light sources in photonic integrated circuits [47]. The threshold, quality, and other properties are gradually being improved [47][48][49][50][51][52].…”

Section: Introductionmentioning

confidence: 99%

“…Microdisk lasers are promising light sources in photonic integrated circuits [47]. The threshold, quality, and other properties are gradually being improved [47][48][49][50][51][52].…”

Section: Introductionmentioning

confidence: 99%

III-Nitride Materials: Properties, Growth, and Applications

2024

Crystals

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“…In addition, InGaN QDs have a strong quantum confinement effect. In the last three decades, LEDs and micro-LEDs based on InGaN quantum dots (QDs) have been studied by many groups [20][21][22][23]. For example, Chunyu Zhao reported the built-in fields in the QDs were effectively screened, resulting in improved performance of the QD LEDs [24].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Gong

Zhang

et al. 2023

Nanomaterials

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InGaN quantum dots (QDs) have attracted significant attention as a promising material for high-efficiency micro-LEDs. In this study, plasma-assisted molecular beam epitaxy (PA-MBE) was used to grow self-assembled InGaN QDs for the fabrication of green micro-LEDs. The InGaN QDs exhibited a high density of over 3.0 × 1010 cm−2, along with good dispersion and uniform size distribution. Micro-LEDs based on QDs with side lengths of the square mesa of 4, 8, 10, and 20 μm were prepared. Attributed to the shielding effect of QDs on the polarized field, luminescence tests indicated that InGaN QDs micro-LEDs exhibited excellent wavelength stability with increasing injection current density. The micro-LEDs with a side length of 8 μm showed a shift of 16.9 nm in the peak of emission wavelength as the injection current increased from 1 A/cm2 to 1000 A/cm2. Furthermore, InGaN QDs micro-LEDs maintained good performance stability with decreasing platform size at low current density. The EQE peak of the 8 μm micro-LEDs is 0.42%, which is 91% of the EQE peak of the 20 µm devices. This phenomenon can be attributed to the confinement effect of QDs on carriers, which is significant for the development of full-color micro-LED displays.

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Ultralow threshold blue quantum dot lasers: what’s the true recipe for success?

Cited by 6 publications

References 37 publications

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

III-Nitride Materials: Properties, Growth, and Applications

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

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