Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe1–xSex through Isoelectronic Substitution

Deng, Songqiang; Jiang, Xianyan; Chen, Lili; Qi, N. D.; Tang, Xinfeng; Chen, Zhiquan

doi:10.1021/acsami.0c17836

Cited by 31 publications

(41 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…28) and AgCuTe 0.9 -Se 0.1 . 27 In our work, high thermoelectric performance is observed in the medium-high temperature range.…”

Section: Resultssupporting

confidence: 49%

“…In the diagram of thermal conductivity varying with temperature, the AgCuTe-1%Cu 2 Se sample has the lowest k at 723 K compared with other published AgCuTe-based thermoelectric materials, such as AgCu 0.99 -Ni 0.01 Te, 25 AgCuTe+8% AgCuSe, 20 Ag 1.37 Cu 0.6 Te, 23 (AgCu) 0.995 -Te 0.9 Se 0.1 , 28 and AgCuTe 0.9 Se 0.1 . 27 Additionally, among these AgCuTe-based thermoelectric materials, the AgCuTe-1%Cu 2 Se sample not only maintains low k but also achieves relatively high PF due to the increased carrier concentration by Cu 2 Se alloying, as shown in Fig. 1b.…”

Section: Resultsmentioning

confidence: 97%

“…The k cannot be further reduced, which is the main reason for the hindrance to the improvement of the thermoelectric properties of AgCuTebased materials. As far as we know, the k L of AgCuTe is already at a very low level $0.35 W m À1 K À1 , 24,27 which is only 43% of that of the commercial BiSbTe-based materials. 29 Therefore, further reduction of the k in the medium-high temperature region is a challenge and is the key to break through the existing thermoelectric performance.…”

Section: Introductionmentioning

confidence: 92%

“…By comparing the previous studies, we found that most researchers focussed on element doping. 20,24,25,27,28 The carrier concentration is optimized by replacing the same main group element Se, resulting in an improvement in the power factor. 24,27 In addition, the researchers also adjusted the proportion of Ag\Cu, which is also an optimization of electrical properties.…”

Section: Introductionmentioning

confidence: 99%

“…20,24,25,27,28 The carrier concentration is optimized by replacing the same main group element Se, resulting in an improvement in the power factor. 24,27 In addition, the researchers also adjusted the proportion of Ag\Cu, which is also an optimization of electrical properties. 23 The k of most AgCuTebased materials is maintained at 0.58 W m À1 K À1 in the medium-high temperature range because the optimization of thermal properties is not signicant enough.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Maximizing phonon scattering efficiency by Cu₂Se alloying in AgCuTe thermoelectric materials

Zhai

Wang

et al. 2022

J. Mater. Chem. A

View full text Add to dashboard Cite

show abstract

“…28) and AgCuTe 0.9 -Se 0.1 . 27 In our work, high thermoelectric performance is observed in the medium-high temperature range.…”

Section: Resultssupporting

confidence: 49%

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Maximizing phonon scattering efficiency by Cu₂Se alloying in AgCuTe thermoelectric materials

Zhai

Wang

et al. 2022

J. Mater. Chem. A

View full text Add to dashboard Cite

show abstract

Defect Engineering Realizes Superior Thermoelectric Performance of GeTe

Wu,

Cai,

Chen

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

GeTe has been considered as a promising mid‐temperature thermoelectric (TE) candidate, but its zT value is severely limited by the excessive hole concentration and high thermal conductivity. Here, it is demonstrated that the TE properties of GeTe can be significantly improve by defect engineering of Sb‐Pb and AgCuTe codoping. The Sb‐Pb codoping is adopted to optimize the carrier concentration and manipulate the rhombohedral lattice distortion, leading to valence band convergence and enhanced power factor. The AgCuTe alloying introduces multiscale phonon scattering centers including dislocations and nano‐precipitates to reduce the lattice thermal conductivity in GeTe. Consequently, a maximum zT of 2.3 at 773 K and an average zT of 1.43 (300–773 K) are obtained in (Ge0.84Sb0.06Pb0.1Te)0.99(AgCuTe)0.01. Moreover, the fabricated thermoelectric module exhibits a high output power density of 0.59 W cm–2 and an energy conversion efficiency of 7.9% at ΔT = 500 K, suggesting hierarchical defect engineering is an effective strategy to realize high‐performance GeTe‐based thermoelectric.

show abstract

Ag₂Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

et al. 2022

View full text Add to dashboard Cite

should have a high electrical conductivity (σ), a high Seebeck coefficient (S), and a low thermal conductivity (κ). [6][7][8][9] Cu 2 Q-and Ag 2 Q-based (Q = S, Se, Te) chalcogenides are exemplified with partially decoupled electrical and thermal transports. Over the past decade, Cu 2 Q materials have been widely investigated, showcasing remarkable zT values (around 2.0) at high temperatures. [10][11][12][13][14] As the homologous compounds sharing some common features, Ag 2 Q-based silver chalcogenides have arisen as a new spotlight in thermoelectrics (Figure 1) in recent years. Notably, the high zT values near unity of Ag 2 Se [15][16][17] make it a potential candidate for room-temperature thermoelectric application. In fact, Ag 2 Q compounds are "old" materials whose discovery can be traced back to the 19th century. [18][19][20] Their thermoelectric properties were first reported in the 1940s-1960s during which decent performance of Ag 2 Se and Ag 2 Te was unveiled. [21][22][23][24][25][26] After that, the study on Ag 2 Q had faded out over decades accompanying the low ebb of thermoelectric research. [27,28] Upon the turn of the century, especially over the last 10 years, the revival has come for thermoelectrics, bringing about great progress in transport theories, [29][30][31][32][33] advanced synthesis, [34][35][36][37] and characterization techniques, [38][39][40] and even the research paradigm. [41][42][43] All these progresses have boosted zT from 1 to 2 in not a few new or old thermoelectric materials. [44][45][46][47][48] In the same period, the booming of flexible/wearable electronics necessitates thermoelectric materials having both high performance and deformability at room temperature. [49][50][51][52] All these factors inspire people to revisit Ag 2 Q-based materials.Ag 2 Q-based materials exhibit a low lattice thermal conductivity originating from the large disorder or even liquid-like behavior of Ag ions. [53][54][55][56] They tend to show n-type conduction with a high electron mobility. [15,57,58] Apart from the thermoelectric properties, an exceptional room-temperature plasticity has been found in Ag 2 S-based materials (Figure 1), [59] which is quite rare and valuable for inorganic semiconductors. [60] Beyond the binary compounds, several ternary and even quaternary Ag 2 (S, Se, Te) alloys have been developed, exhibiting both high zT values and excellent plastic deformability. [54,[61][62][63] In addition, CuAgQ materials, the intermediate compounds between Ag 2 Q and Cu 2 Q, have also received wide attention as promising thermoelectric materials. [64][65][66][67] Considering the new, intriguing scientific issues and great application prospects of Ag 2 Q-based silver chalcogenide thermoelectric materials, here in this review, we try to provide the Thermoelectric technology provides a promising solution to sustainable energy utilization and scalable power supply. Recently, Ag 2 Q-based (Q = S, Se, Te) silver chalcogenides have come forth as potential thermoelectric materials that are endowed wi...

show abstract

Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe_1–xSe_x through Isoelectronic Substitution

Cited by 31 publications

References 51 publications

Maximizing phonon scattering efficiency by Cu₂Se alloying in AgCuTe thermoelectric materials

Maximizing phonon scattering efficiency by Cu₂Se alloying in AgCuTe thermoelectric materials

Defect Engineering Realizes Superior Thermoelectric Performance of GeTe

Ag₂Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

Contact Info

Product

Resources

About

Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe1–xSex through Isoelectronic Substitution

Cited by 31 publications

References 51 publications

Maximizing phonon scattering efficiency by Cu2Se alloying in AgCuTe thermoelectric materials

Maximizing phonon scattering efficiency by Cu2Se alloying in AgCuTe thermoelectric materials

Defect Engineering Realizes Superior Thermoelectric Performance of GeTe

Ag2Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

Contact Info

Product

Resources

About

Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe_1–xSe_x through Isoelectronic Substitution

Maximizing phonon scattering efficiency by Cu₂Se alloying in AgCuTe thermoelectric materials

Maximizing phonon scattering efficiency by Cu₂Se alloying in AgCuTe thermoelectric materials

Ag₂Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials