2022
DOI: 10.1002/adma.202110236
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Ag2Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

Abstract: should have a high electrical conductivity (σ), a high Seebeck coefficient (S), and a low thermal conductivity (κ). [6][7][8][9] Cu 2 Q-and Ag 2 Q-based (Q = S, Se, Te) chalcogenides are exemplified with partially decoupled electrical and thermal transports. Over the past decade, Cu 2 Q materials have been widely investigated, showcasing remarkable zT values (around 2.0) at high temperatures. [10][11][12][13][14] As the homologous compounds sharing some common features, Ag 2 Q-based silver chalcogenides have a… Show more

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Cited by 63 publications
(56 citation statements)
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References 167 publications
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“…212 The improved ionic character induces a less sharp band edge and an enlarged E g . 212 Fig. 6(b) plots the S-alloying content ( x )-dependent n and μ at room temperature, 117 in which n and μ show complex changing trends with increasing alloying contents.…”
Section: Bulk Materialsmentioning
confidence: 99%
See 1 more Smart Citation
“…212 The improved ionic character induces a less sharp band edge and an enlarged E g . 212 Fig. 6(b) plots the S-alloying content ( x )-dependent n and μ at room temperature, 117 in which n and μ show complex changing trends with increasing alloying contents.…”
Section: Bulk Materialsmentioning
confidence: 99%
“…143 Ag 2 Se-based films exhibit excellent thermoelectric performance and considerable flexibility, making them good candidates for FTEDs. 212,231…”
Section: Flexible Filmsmentioning
confidence: 99%
“…Commonly, the thermal conductivity of thermoelectric material is larger than that of P(VDF-TrFE). [28][29][30] It means that doping a P(VDF-TrFE) film with thermoelectric fillers should increase its thermal conductivity, thereby producing a rapid thermal-release electrical response that shortens the pyroelectric response time. Therefore, the thermoelectric fillers are chosen in this work.…”
Section: Introductionmentioning
confidence: 99%
“…Among these inorganic TE materials, Ag 2 Se is an n-type degenerate semiconductor with a narrow band gap in the range of 0.04–0.18 eV and exhibits superior TE performance near room temperature. However, Ag 2 Se is also rigid and brittle, so a huge effort was made to fabricate flexible Ag 2 Se materials. Flexibility can be achieved in rigid materials as long as their thickness is small enough. , For instance, flexibility can be realized by depositing the Ag 2 Se thin film on flexible polymer substrates or fabricating Ag 2 Se/polymer composites. Another approach to improve the flexibility of Ag 2 Se has been raised with the discovery of the metal-like ductility in Ag 2 S. , The combination of ductility in Ag 2 S and superior TE performance in Ag 2 Se may engender a promising method to fabricate ductile all-inorganic TE materials with simultaneous high ZT and flexibility. , Recently, silver chalcogenides, that is, Ag 2 (S/Se/Te)-based materials have become one of the hot topics in the TE community because of their superior TE properties and exceptional ductility, which is promising to fabricate full-inorganic flexible TE modules . For example, Wu et al developed a method composed of vacuum-assisted filtration and hot pressing to fabricate sulfur-doped Ag 2 Se films on a flexible nylon substrate.…”
Section: Introductionmentioning
confidence: 99%