Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Saxena, Nishant; Manivannan, Anbarasu

doi:10.1002/pssr.202200101

Cited by 7 publications

(4 citation statements)

References 73 publications

(177 reference statements)

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“…Since the discovery of OTS materials, many models were developed to explain the threshold switching phenomenon [16,29,[101][102][103][104][105][106][107][108][109][110]. For instance, Kroll et al proposed a thermal runaway model [103,104] that explains the OTS as the result of a Joule heating process, which triggers a positive feedback loop for carrier generation and leads to an exponential increase of the conductivity.…”

Section: Ots Modelsmentioning

confidence: 99%

Chalcogenide Ovonic Threshold Switching Selector

Zhao,

Clima,

Garbin

et al. 2024

Nano-Micro Lett.

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Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane, commonly referred to as three-dimensional phase change memory, stands out as one of the most promising candidates. The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch (OTS). The OTS device, which employs chalcogenide film, has thereby gathered increased attention in recent years. In this paper, we begin by providing a brief introduction to the discovery process of the OTS phenomenon. Subsequently, we summarize the key electrical parameters of OTS devices and delve into recent explorations of OTS materials, which are categorized as Se-based, Te-based, and S-based material systems. Furthermore, we discuss various models for the OTS switching mechanism, including field-induced nucleation model, as well as several carrier injection models. Additionally, we review the progress and innovations in OTS mechanism research. Finally, we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications, such as self-selecting memory and neuromorphic computing.

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Section: Ots Modelsmentioning

confidence: 99%

Chalcogenide Ovonic Threshold Switching Selector

Zhao,

Clima,

Garbin

et al. 2024

Nano-Micro Lett.

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“…[6,7] While for the case of PCM memories good candidate materials have been identified mainly within the family of germaniumantimony-tellurium (GST) compounds (with different stoichiometry [8,9] and doping [10,11] ), the ideal material for OTS has still to be identified notwithstanding the many candidates proposed so far, such as GeSe, GeS, AsTe, AlTe, TeAsSiGe, SiGeInAsTe, GeTeSbS, and TeAsSiGeP. [12] Particularly relevant is the case of amorphous GeSe alloys [5,[13][14][15] : While a lot of effort has been devoted to GeTe as a prototypical phase change material, and to GeSe 2 as an efficient optoelectronic system, much less is known about the quasi-stoichiometric GeSe compounds. Experimental results indicate that GeSe exhibits ovonic electrical switching in the amorphous phase [13,16] and that the modulation of the stoichiometry Ge/Se ratio affects the electrical response of the device, in terms of I-V characteristics, threshold potential, switching response, endurance, and power dissipation.…”

Section: Introductionmentioning

confidence: 99%

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Slassi

Medondjio

Padovani

et al. 2023

Adv Elect Materials

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The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material‐to‐device multiscale technique, a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide is proposed. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. The metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material‐device codesign and the optimization of novel technologies.

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“…These states are differentiated by their significant variations in electrical and optical properties. The amorphous or RESET phase manifests high resistivity and low reflectivity in contrast with the crystalline or SET phase exhibiting low resistivity and high reflectivity [4,5,7,8]. These two phases correspond to binary logic '0' and '1', the two memory states, respectively.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of vibrational properties and local structure change during phase transition in Ge₂Sb₂Te₅ and In₃SbTe₂ phase change materials

Pathak¹,

Tanwar²,

Kumar³

et al. 2022

Semicond. Sci. Technol.

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Temperature-dependent local structural details of In3SbTe2 (IST) and Ge2Sb2Te5 (GST) phase change materials are explored with the aid of Raman scattering and X-ray Photoelectron Spectroscopy (XPS) techniques. Significant temperature-induced changes occur in the local structure of the phase change material, facilitating the amorphous to crystalline phase transformation. These two phases exhibit a large resistivity contrast, which is utilized to store data in the Phase Change Memory (PCM) application. The Raman spectra recorded for IST material suggest that the as-deposited sample (amorphous phase) first crystallized around 300 ℃ annealing temperature with two binary phases InTe and InSb formations. InTe and InSb phases were obtained at ~85.5 cm-1 and ~180 cm-1 Raman shift, respectively, having vibration modes associated with B1g symmetry and TO phonons with Г15 symmetry. Further annealing at a higher temperature of 400℃, a ternary IST phase is obtained at ~163 cm-1 Raman shift indicating the transformation to a fully crystalline state. On the other hand, the amorphous GST material forms a metastable face-centered cubic (FCC) phase and stable hexagonal (HEX) phase upon crystallization. The Raman findings demonstrate the changes in vibration modes of Ge-Te and Sb-Te bonds during phase switching without any phase separation. Crystalline GST (HEX phase) comprises rising peaks of GeTe4 and GeTe4-nGen (n=1, 2) corner-sharing tetrahedra with A1 mode at ~104.5 cm-1 and ~137 cm-1 Raman shift, respectively, and a declining Sb2Te3 peak at ~175 cm-1, having A1g (2) vibration mode. Furthermore, the XPS analysis displays the changes in the bonding mechanism of the elements present in the phase change material during the amorphous to crystalline phase transition, firmly supporting the Raman observations.

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Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Cited by 7 publications

References 73 publications

Chalcogenide Ovonic Threshold Switching Selector

Chalcogenide Ovonic Threshold Switching Selector

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Evaluation of vibrational properties and local structure change during phase transition in Ge₂Sb₂Te₅ and In₃SbTe₂ phase change materials

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Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Cited by 7 publications

References 73 publications

Chalcogenide Ovonic Threshold Switching Selector

Chalcogenide Ovonic Threshold Switching Selector

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials

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Evaluation of vibrational properties and local structure change during phase transition in Ge₂Sb₂Te₅ and In₃SbTe₂ phase change materials