Two-dimensional (2D) transition metal dichalcogenides (TMDs) recently emerged as novel materials displaying a wide variety of physico-chemical properties that render them unique scaffolds for high-performance (opto)electronics. The controlled physisorption of molecules on the TMD surface is a viable approach to tune their optical and electronic properties. Solvents, made of small aromatic molecules, are frequently employed for the cleaning of the 2D materials or as "dispersant" for their chemical functionalization with larger (macro)molecules, without considering their potential key effect in locally modifying the characteristics of 2D materials. In this work, we demonstrate how the electronic and optical properties of mechanically exfoliated monolayer of MoS2 and WSe2 are modified when physically interacting with small aromatic molecules of common solvents. Low
Molecular doping is a powerful, tuneable, and versatile method to modify the electronic properties of 2D transition metal dichalcogenides (TMDCs). While electron transfer is an isotropic process, dipole‐induced doping is a collective phenomenon in which the orientation of the molecular dipoles interfaced to the 2D material is key to modulate and boost this electronic effect, despite it is not yet demonstrated. A novel method toward the molecular functionalization of monolayer MoS2 relying on the molecular self‐assembly of metal phthalocyanine and the orientation‐controlled coordination chemistry of axial ligands is reported here. It is demonstrated that the subtle variation of position and type of functional groups exposed on the pyridinic ligand, yields a molecular dipole with programed magnitude and orientation which is capable to strongly influence the opto‐electronic properties of monolayer MoS2. In particular, experimental results revealed that both p‐ and n‐type doping can be achieved by modulating the charge carrier density up to 4.8 1012 cm−2. Density functional theory calculations showed that the doping mechanism is primarily resulting from the effect of dipole‐induced doping rather than charge transfer. The strategy to dope TMDCs is a highly modulable and robust, and it enables to enrich the functionality of 2D materials‐based devices for high‐performance applications in optoelectronics.
Structural defects are known to worsen electrical and optical properties of 2D materials. Transition metal dichalcogenides (TMDs) are prone to chalcogen vacancies and molecular functionalization of these vacancies offers a powerful strategy to engineer the crystal structure by healing such defects. This molecular approach can effectively improve physical properties of 2D materials and optimize the performance of 2D electronic devices. While this strategy has been successfully exploited to heal vacancies in sulfides, its viability on selenides based TMDs has not yet been proven. Here, by using thiophenol molecules to functionalize monolayer WSe 2 surface containing Se vacancies, it is demonstrated that the defect healing via molecular approach not only improves the performance of WSe 2 transistors (> tenfold increase in the current density, the electron mobility, and the I on /I off ratio), but also enhances the photoluminescence properties of monolayer WSe 2 flakes (threefold increase of photoluminescence intensity at room temperature). Theoretical calculations elucidate the mechanism of molecular passivation, which originates from the strong interaction between thiol functional group at Se vacancy sites and neighboring tungsten atoms. These results demonstrate that the molecular approach represents a powerful strategy to engineer WSe 2 transistors and optimize their optical properties, paving the way toward high-performance 2D (opto)electronic devices.
Black phosphorus (BP) is recently becoming more and more popular among semiconducting 2D materials for (opto)electronic applications. The controlled physisorption of molecules on the BP surface is a viable approach to modulate its optical and electronic properties. Solvents consisting of small molecules are often used for washing 2D materials or as liquid media for their chemical functionalization with larger molecules, disregarding their ability to change the opto‐electronic properties of BP. Herein, it is shown that the opto‐electronic properties of mechanically exfoliated few‐layer BP are altered when physically interacting with common solvents. Significantly, charge transport analysis in field‐effect transistors reveals that physisorbed solvent molecules induce a modulation of the charge carrier density which can be as high as 1012 cm−2 in BP, i.e., comparable to common dopants such as F4‐TCNQ and MoO3. By combining experimental evidences with density functional theory calculations, it is confirmed that BP doping by solvent molecules not only depends on charge transfer, but is also influenced by molecular dipole. The results clearly demonstrate how an exquisite tuning of the opto‐electronic properties of few‐layer BP can be achieved through physisorption of small solvent molecules. Such findings are of interest both for fundamental studies and more technological applications in opto‐electronics.
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